2N3904 Fairchild Semiconductor, 2N3904 Datasheet

no-image

2N3904

Manufacturer Part Number
2N3904
Description
TRANSISTOR, NPN, TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N3904.pdf (7 pages)

Specifications of 2N3904

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
40V
Power Dissipation Pd
625mW
Dc Collector Current
200mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
TO-92
No. Of Pins
3
Dc Current Gain Hfe
100
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2N3904
Manufacturer:
FSC
Quantity:
30
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2N3904
Manufacturer:
PHILIPS
Quantity:
250 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2N3904
Manufacturer:
ITTAUK
Quantity:
60 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2N3904
Manufacturer:
FSC
Quantity:
5 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2N3904
Manufacturer:
KEC
Quantity:
2 880
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
2N3904
Manufacturer:
ST
0
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
2N3904
Manufacturer:
CJ/长电
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
2N3904
Quantity:
23 760
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
2N3904 TO-92
Manufacturer:
ST
0
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
2N3904-RTK/P
Manufacturer:
KEC/PL
Quantity:
20 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
2N3904/2N3906
Manufacturer:
ST
0
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
2N3904/ZC
Manufacturer:
KEC
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
2N39041AM
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
2N3904AT
Manufacturer:
KEC
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
2N3904BU
Quantity:
21 949
Company:
H&T Electronics H&T Electronics
Part Number:
2N3904BU
Quantity:
2 500
2001 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
JC
JA
Absolute Maximum Ratings*
, T
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
*
**
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
*
C
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
stg
B
E
2N3904
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25 C
TO-92
Characteristic
Parameter
T
MMBT3904
SOT-23
A
Mark: 1A
= 25°C unless otherwise noted
C
T
A
= 25°C unless otherwise noted
B
2N3904
83.3
625
200
5.0
E
*MMBT3904
2
.
Max
350
357
2.8
-55 to +150
Value
SOT-223
PZT3904
200
6.0
40
60
C
**PZT3904
1,000
2N3904/MMBT3904/PZT3904, Rev A
125
8.0
B
Units
C
mA
V
V
V
C
mW/ C
Units
E
mW
C/W
C/W

Related parts for 2N3904

Image
Part Number
Description
Manufacturer
Datasheet
Request R
SM2G50US60
Part Number:
SM2G50US60
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
SM2G50US60.pdf (10 pages)
FTP5027RTU
Part Number:
FTP5027RTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FTP5021OTU
Part Number:
FTP5021OTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FDMS86300DC
Part Number:
FDMS86300DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86300DC.pdf (8 pages)
FDMS3006SDC
Part Number:
FDMS3006SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3006SDC.pdf (9 pages)
FDMS3008SDC
Part Number:
FDMS3008SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3008SDC.pdf (9 pages)
FDMS3016DC
Part Number:
FDMS3016DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3016DC.pdf (8 pages)
FDMS86101DC
Part Number:
FDMS86101DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86101DC.pdf (8 pages)
FDD86113LZ
Part Number:
FDD86113LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDD86113LZ.pdf (6 pages)
FDMS86500DC
Part Number:
FDMS86500DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86500DC.pdf (8 pages)
FDMS8558S
Part Number:
FDMS8558S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8558S.pdf (8 pages)
FDMS8560S
Part Number:
FDMS8560S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8560S.pdf (8 pages)
FDMS8570S
Part Number:
FDMS8570S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8570S.pdf (8 pages)
FDMC86116LZ
Part Number:
FDMC86116LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMC86116LZ.pdf (7 pages)
FDMS86250
Part Number:
FDMS86250
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86250.pdf (7 pages)

2N3904 Summary of contents

Page 1

... MMBT3904 C E SOT-23 B Mark 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A 2N3904 625 5.0 83.3 200 PZT3904 SOT-223 Value Units 6.0 V 200 mA -55 to +150 C Max Units *MMBT3904 **PZT3904 350 1,000 mW 2.8 8.0 mW/ C C/W 357 125 C 2N3904/MMBT3904/PZT3904, Rev A ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current BL I Collector Cutoff Current CEX ON CHARACTERISTICS Current Gain FE V Collector-Emitter ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 25 °C 200 - 40 °C 100 0 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Noise Figure vs Frequency 1 200 1 0 200 ...

Page 5

Typical Characteristics Storage Time vs Collector Current 500 T = 25°C J 100 T = 125° COLLECTOR CURRENT (mA) C Current Gain 500 100 10 0 COLLECTOR CURRENT (mA) C ...

Page 6

Test Circuits 300 ns Duty Cycle 0.5 V 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 500 Duty Cycle 9.1 V FIGURE 2: Storage and ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

Related keywords