NTE181 NTE ELECTRONICS, NTE181 Datasheet

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NTE181

Manufacturer Part Number
NTE181
Description
BIPOLAR TRANSISTOR, NPN, -90V, TO-3
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE181

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
-90V
Transition Frequency Typ Ft
2MHz
Power Dissipation Pd
200W
Dc Collector Current
300mA
Dc Current Gain Hfe
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case
designed for use as output devices in complementary audio amplifiers to 100 watts music power per
channel.
Features:
D High DC Current Gain: h
D Excellent Safe Operating Area
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Emitter Sustaining Voltage V
Collector–Base Cutoff Current
Emitter–Base Cutoff Current
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EB
CB
C
NTE180 (PNP) & NTE181 (NPN)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CER
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
= +25 C), P
High Power Audio Amplifier
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
Silicon Power Transistor
= 25 – 100 @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
=+25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
300 s. Duty Cycle
CEO(sus)
(BR)CER
I
I
CBO
EBO
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
V
V
V
C
C
CB
CB
BE
C
= 200mA, R
= 200mA, Note 1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 7.5A
= 100V, I
= 4V, I
= 100V, I
Test Conditions
C
= 0
E
E
2%.
BE
= 0, T
= 0
= 100 , Note 1 100
C
= +150 C
Min Typ Max Unit
90
–65 to +200 C
–65 to +200 C
0.875 C/W
1.0
5.0
1.0
1.14W/ C
200W
100V
100V
mA
mA
mA
7.5A
V
V
90V
30A
4V

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NTE181 Summary of contents

Page 1

... NTE180 (PNP) & NTE181 (NPN) Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: D High DC Current Gain Excellent Safe Operating Area Absolute Maximum Ratings: Collector– ...

Page 2

... Base–Emitter Saturation Voltage Dynamic Characteristics Current Gain–Bandwidth Product Note 1. Pulse Test: Pulse Width Note 2. NTE181MP is a matched pair of NTE181 with their DC Current Gain (h 10% of each other. Note 3. NTE180MCP is a matched complementary pair containing 1 each of NTE180 (PNP) and NTE181 (NPN). ...

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