NTE392 NTE ELECTRONICS, NTE392 Datasheet
NTE392
Manufacturer Part Number
NTE392
Description
BIPOLAR TRANSISTOR, NPN, 100V, TO-218
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE392.pdf
(2 pages)
Specifications of NTE392
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Transition Frequency Typ Ft
3MHz
Power Dissipation Pd
125W
Dc Collector Current
25A
Dc Current Gain Hfe
75
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package
designed for general purpose power amplifier and switching applications.
Features:
D 25A Collector Current
D Low Leakage Current: I
D Excellent DC Gain: h
D High Current Gain Bandwidth Product: h
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Continuous Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Unclamped Inductive Load, E
Thermal Resistance, Junction−to−Case, R
Thermal Resistance, Junction−to−Ambient, R
Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle ≤ 10%.
Continuous
Peak (Note 1)
Derate Above 25°C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
FE
CB
C
NTE392 (NPN) & NTE393 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
CEO
= 40 Typ @ 15A
= +25°C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SB
stg
= 1mA @ V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
fe
thJA
= 3 Min @ I
= 60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 1A, f = 1MHz
−65° to +150°C
−65° to +150°C
35.7°C/W
1.0°C/W
1W/°C
125W
90mJ
100V
100V
25A
40A
5V
5A
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NTE392 Summary of contents
Page 1
... NTE392 (NPN) & NTE393 (PNP) Silicon Complementary Transistors Description: The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: D 25A Collector Current D Low Leakage Current Excellent DC Gain: h ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector−Emitter Sustaining Voltage V Collector−Emitter Cutoff Current Emitter−Base Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter ON Voltage Dynamic Characteristics Small−Signal Current Gain Current−Gain Bandwidth Product Note 2. Pulse ...