NTE71 NTE ELECTRONICS, NTE71 Datasheet
NTE71
Manufacturer Part Number
NTE71
Description
TRANSISTOR,BJT,NPN,90V V(BR)CEO,20A I(C),TO-210AE
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE71.pdf
(2 pages)
Description:
The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that
provides surface stabilization for high voltage operation and enhances long term reliability.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base VOltage, V
Continuous Collector Current, I
Continuous Base Current, I
Total Power Dissipation (T
Storage Temperature Range, T
Electrical Characteristics: (T
Note 1. Pulse test: Pulse Width = 300 s, Duy Cycle
OFF Characteristics
Collector–Emitter Sustaining Voltage
Emitte Cutoff Current
Collector Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
Collector Saturation Voltage
Base–Emitter Voltage
Parameter
EBO
CBO
C
High Current Amp, Fast Switch
B
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25 C unless otherwise spcified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CEO(sus)
Symbol
V
CE(sat)
I
I
V
h
EBO
CEX
FE
BE
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE71
I
V
V
V
T
V
I
I
C
C
C
C
EB
CE
CE
CE
= 100mA
= 10A, I
= 10A, I
= +150 C
= 10V
= 150V, V
= 150V, V
= 3V, I
Test Conditions
B
B
C
2%.
= 1.5A
= 1.5A
= 10A
BE
BE
= –1.5V
= –1.5V,
Min
150
10
–
–
–
–
–
Typ
–65 to +200 C
–
–
–
–
–
–
–
Max Unit
250
1.5
2.5
20
50
–
2
200W
150V
150V
4.5A
mA
mA
10V
20A
V
V
V
A
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NTE71 Summary of contents
Page 1
... High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability. Absolute Maximum Ratings: Collector–Base Voltage, V CBO Collector–Emitter Voltage, V Emitter– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Dynamic Characteristics Small–Signal Current Gain Turn–On Time Turn–Off Time Rise Time Storage Time Fall Time Emitter .760 (19.3) Dia .083 (2.1) Dia .129 (3.3) = +25 C unless otherwise spcified) C Symbol Test Conditions h ...