PBSS4021PT NXP Semiconductors, PBSS4021PT Datasheet
PBSS4021PT
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PBSS4021PT Summary of contents
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... PBSS4021PT 20 V, 3.5 A PNP low V Rev. 01 — 29 January 2010 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NT. 1.2 Features Very low collector-emitter saturation voltage V High collector current capability I High collector current gain (h High energy efficiency due to less heat generation ...
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... Rev. 01 — 29 January 2010 PBSS4021PT 20 V, 3.5 A PNP low V (BISS) transistor CEsat Simplified outline Graphic symbol [1] Marking code *BJ Min Max − ...
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... O , standard footprint 1.5 P tot (W) (1) 1.0 (2) 0.5 (3) 0 −75 − standard footprint 2 3 Power derating curves Rev. 01 — 29 January 2010 PBSS4021PT 20 V, 3.5 A PNP low V CEsat Min ≤ 25 °C [1] - [ −55 −65 006aab954 25 75 125 175 T (°C) amb 2 (BISS) transistor ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021PT_1 Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point O , standard footprint −3 −2 − Rev. 01 — 29 January 2010 PBSS4021PT 20 V, 3.5 A PNP low V CEsat Conditions Min Typ [1] in free air - - [ [ ...
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... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021PT_1 Product data sheet −3 −2 − −3 −2 − Rev. 01 — 29 January 2010 PBSS4021PT 20 V, 3.5 A PNP low V (BISS) transistor CEsat 006aab956 006aab957 © NXP B.V. 2010. All rights reserved. ...
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... Boff turn-on time storage time fall time turn-off time = −10 V; transition frequency −100 mA 100 MHz = −10 V; collector capacitance MHz E e ≤ 300 μs; δ ≤ 0.02. p Rev. 01 — 29 January 2010 PBSS4021PT 20 V, 3.5 A PNP low V CEsat Min Typ = 250 400 = −1 A ...
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... Product data sheet 006aac002 −10 2 −10 3 − (mA) C Fig 6. 006aac004 −10 2 −10 3 − (mA) C Fig 8. Rev. 01 — 29 January 2010 PBSS4021PT 20 V, 3.5 A PNP low V CEsat −5.0 I (mA) = − (A) −40 −4.0 −30 −20 −3.0 −10 −2.0 −1.0 0.0 −1.0 −2.0 −3.0 0 °C ...
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... I (mA) C Fig 10. Collector-emitter saturation voltage as a 006aac008 (3) −10 2 −10 3 − (mA) C Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 29 January 2010 PBSS4021PT 20 V, 3.5 A PNP low V CEsat −1 V CEsat (V) −1 −10 (1) (2) −2 −10 (3) −3 −10 −1 −10 −1 −10 − ° ...
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... PBSS4021PT_1 Product data sheet 20 V, 3.5 A PNP low (probe) oscilloscope 450 Ω Rev. 01 — 29 January 2010 PBSS4021PT (BISS) transistor CEsat input pulse (idealized waveform) − I (100 %) Bon − I Boff output pulse (idealized waveform) − off (probe) ...
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... Product data sheet 3.0 2.8 2.5 1.4 2.1 1.2 1 1.9 Dimensions in mm Packing methods SOT23 4 mm pitch tape and reel Rev. 01 — 29 January 2010 PBSS4021PT 20 V, 3.5 A PNP low V (BISS) transistor CEsat 1.1 0.9 3 0.45 0.15 2 0.48 0.15 0.38 0.09 04-11-04 ...
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... Rev. 01 — 29 January 2010 PBSS4021PT 20 V, 3.5 A PNP low V (BISS) transistor CEsat 2 0.6 (3×) Dimensions in mm Dimensions in mm preferred transport direction during soldering © NXP B.V. 2010. All rights reserved. solder lands ...
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... Revision history Table 9. Revision history Document ID Release date PBSS4021PT_1 20100129 PBSS4021PT_1 Product data sheet 20 V, 3.5 A PNP low V Data sheet status Change notice Product data sheet - Rev. 01 — 29 January 2010 PBSS4021PT (BISS) transistor CEsat Supersedes - © NXP B.V. 2010. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 29 January 2010 PBSS4021PT 20 V, 3.5 A PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved ...
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... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 29 January 2010 Document identifier: PBSS4021PT_1 ...