2PB709BRL NXP Semiconductors, 2PB709BRL Datasheet - Page 4

• Manufacturer Part Number: 2PB709BRL
• Description: TRANSISTOR,PNP,50V,0.2A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of 2PB709BRL

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -50V
• Power Dissipation Pd: 250mW
• Dc Collector Current: -200mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• No.: RoHS Compliant
• Dc Current Gain Hfe: 210
• Rohs Compliant: Yes

NXP Semiconductors
7. Characteristics
2PB709BRL_2PB709BSL
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
δ = 1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
10
−4
Table 8.
T
[1]
Symbol
I
h
V
f
I
C
CBO
EBO
T
amb
FE
CEsat
c
Pulse test: t
= 25
10
°
C unless otherwise specified.
−3
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
transition frequency
collector capacitance
p
h
h
≤ 300 μs; δ ≤ 0.02.
FE
FE
All information provided in this document is subject to legal disclaimers.
group R
group S
10
−2
Rev. 1 — 28 June 2010
10
−1
V
V
V
Conditions
V
V
T
V
I
I
f = 100 MHz
f = 1 MHz
C
B
2PB709BRL; 2PB709BSL
j
CB
CB
EB
CE
CE
CB
= 150 °C
= −100 mA;
= −10 mA
= −60 V; I
= −60 V; I
= −5 V; I
= −10 V; I
= −6 V; I
= −10 V; I
50 V, 200 mA PNP general-purpose transistors
1
C
C
E
E
E
C
= 0 A
= −10 mA;
= i
= 0 A
= 0 A;
= −2 mA
e
= 0 A;
10
[1]
Min
-
-
-
210
210
290
-
100
-
10
2
Typ
-
-
-
-
-
-
-
200
-
© NXP B.V. 2010. All rights reserved.
t
p
006aaa991
(s)
Max
−10
−5
−10
460
340
460
−250
-
3
10
3
Unit
nA
μA
nA
mV
MHz
pF
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