BLF574 NXP Semiconductors, BLF574 Datasheet

LDMOS,RF,500W,HF-500MHZ,50V

BLF574

Manufacturer Part Number
BLF574
Description
LDMOS,RF,500W,HF-500MHZ,50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF574

Transistor Type
RF MOSFET
Drain Source Voltage Vds
110V
Continuous Drain Current Id
56A
Operating Frequency Range
225MHz
Rf Transistor Case
SOT-539A
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF574
Manufacturer:
SAMSUNG
Quantity:
1 000
Part Number:
BLF574
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLF574
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial
applications in the HF to 500 MHz band.
Table 1.
I
I
I
I
I
I
I
I
I
I
Mode of operation
CW
BLF574
HF / VHF power LDMOS transistor
Rev. 02 — 24 February 2009
Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an I
of 1000 mA:
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Industrial, scientific and medical applications
Broadcast transmitter applications
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 500 W
Power gain = 26.5 dB
Efficiency = 70 %
Application information
f
(MHz)
225
108
V
(V)
50
50
DS
P
(W)
500
600
L
Product data sheet
G
(dB)
26.5
27.5
p
(%)
70
73
D
Dq

Related parts for BLF574

BLF574 Summary of contents

Page 1

... BLF574 HF / VHF power LDMOS transistor Rev. 02 — 24 February 2009 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Mode of operation CW CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...

Page 2

... T case junction to case is measured under RF conditions. Rev. 02 — 24 February 2009 HF / VHF power LDMOS transistor Simplified outline Graphic symbol [1] Min - 0 Typ = 400 W 0.23 L © NXP B.V. 2009. All rights reserved. BLF574 sym117 Version SOT539A Max Unit 110 V + +150 C 225 C Unit K ...

Page 3

... Min Typ Max Unit = 2.5 mA 110 - 250 mA 1.25 1 500 mA 1.35 1. GS( GS(th 8. MHz MHz MHz = 1000 mA for total device Conditions Min Typ Max Unit P = 400 400 400 BLF574 - V 2. 2 280 0. 204 - 26 © NXP B.V. 2009. All rights reserved ...

Page 4

... NXP Semiconductors Fig 1. 6.1 Ruggedness in class-AB operation The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 400 225 MHz. L BLF574_2 Product data sheet 500 C oss (pF) 400 300 200 100 MHz. GS Output capacitance as a function of drain-source voltage; typical values per section Rev. 02 — ...

Page 5

... 225 MHz 400 600 800 1000 1200 1400 1800 mA Dq Power gain as function of load power; typical values BLF574 001aaj128 400 500 P (W) L © NXP B.V. 2009. All rights reserved ...

Page 6

... 224.95 MHz 225.05 MHz 600 800 1000 1200 1400 mA Dq Third order intermodulation distortion as a function of peak envelope load power; typical values BLF574 001aaj131 800 P (W) L(PEP) © NXP B.V. 2009. All rights reserved ...

Page 7

... Rev. 02 — 24 February 2009 HF / VHF power LDMOS transistor = 2.2 F/m; height = 0.79 mm; Cu (top/bottom Value Remarks [1] [1] [1] TDK4532X7R1E475Mt020U [1] 220 [1] [1] [1] [1] [1] [ mm; length = 125 132 0 0 120 mm EZ-141-AL-TP-M17 BLF574 © NXP B.V. 2009. All rights reserved ...

Page 8

... Component layout for class-AB application circuit BLF574_2 Product data sheet C10 L10 C11 Rev. 02 — 24 February 2009 HF / VHF power LDMOS transistor C12 C17 C13 C20 L11 C14 C18 C21 L12 C15 C22 C19 C16 + R4 L4 © NXP B.V. 2009. All rights reserved. BLF574 T3 C23 C24 T4 001aaj132 ...

Page 9

... TTF (0.1 % failure fraction). = 100 110 120 130 140 150 160 170 180 190 200 C j BLF574 electromigration (I , total device) D Rev. 02 — 24 February 2009 BLF574 HF / VHF power LDMOS transistor 001aaj133 (A) dc © NXP B.V. 2009. All rights reserved ...

Page 10

... Fig 9. BLF574_2 Product data sheet Typical impedance and Z test circuit impedances 3.2 + j2.5 gate Z S Definition of transistor impedance Rev. 02 — 24 February 2009 BLF574 HF / VHF power LDMOS transistor Z L 7.5 + j4.0 drain Z L 001aaf059 © NXP B.V. 2009. All rights reserved ...

Page 11

... Fig 11. Power gain as function of load power; typical Rev. 02 — 24 February 2009 HF / VHF power LDMOS transistor 30 28 (7) (6) (5) 26 (4) (3) (2) ( 100 200 300 400 225 MHz 400 600 800 1000 1200 1400 1800 mA Dq values © NXP B.V. 2009. All rights reserved. BLF574 001aaj135 500 P ( ...

Page 12

... HF / VHF power LDMOS transistor 001aaj136 ideal (dBm (1) (2) 20 (3) 40 (4) ( 100 200 300 400 P L(PEP 224.95 MHz 225.05 MHz 600 800 1000 1200 1400 mA Dq function of peak envelope load power; typical values BLF574 001aaj138 500 600 (W) © NXP B.V. 2009. All rights reserved ...

Page 13

... Rev. 02 — 24 February 2009 HF / VHF power LDMOS transistor Figure 16. = 2.2 F/m; height = 0.79 mm; Cu (top/bottom Value Remarks [1] [1] [1] [1] [1] TDK4532X7R1E475Mt020U 220 [1] [1] [1] [1] [1] [ mm; length = 125 132 0 0 120 mm EZ-141-AL-TP-M17 BLF574 © NXP B.V. 2009. All rights reserved ...

Page 14

... C14 C18 C23 C22 C16 C17 L11 L12 C19 C24 C15 L3 R3 C12 C14 C23 C18 C16 C22 C17 5 mm C24 3 mm C19 C15 R4 C13 L4 BLF574 output C20 T3 50 C21 T4 001aaj139 T3 C20 C21 T4 001aaj140 © NXP B.V. 2009. All rights reserved ...

Page 15

... EUROPEAN PROJECTION BLF574 SOT539A 0.25 0.51 0.25 0.010 0.020 0.010 ISSUE DATE 99-12-28 00-03-03 © NXP B.V. 2009. All rights reserved ...

Page 16

... Release date Data sheet status 20090224 Product data sheet • Data sheet status updated from Preliminary to Product 20081208 Preliminary data sheet Rev. 02 — 24 February 2009 BLF574 HF / VHF power LDMOS transistor Change notice Supersedes - BLF574_1 - - © NXP B.V. 2009. All rights reserved ...

Page 17

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 24 February 2009 BLF574 HF / VHF power LDMOS transistor © NXP B.V. 2009. All rights reserved ...

Page 18

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF574 All rights reserved. Date of release: 24 February 2009 Document identifier: BLF574_2 ...

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