BSP297L6327 Infineon Technologies, BSP297L6327 Datasheet

MOSFET, N, LOGIC, REEL 1K

BSP297L6327

Manufacturer Part Number
BSP297L6327
Description
MOSFET, N, LOGIC, REEL 1K
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP297L6327

Transistor Polarity
N Channel
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
200V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
1.4V
Rohs Compliant
Yes
Feature
· N-Channel
· Enhancement mode
· Logic Level
· dv/dt rated
SIPMOS Ò Small-Signal-Transistor
Type
BSP297
BSP297
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Reverse diode dv/dt
I
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
S
A
A
A
A
Pb-free lead plating; RoHS compliant
=0.66A, V
=25°C
=70°C
=25°C
=25°C
DS
=160V, di/dt=200A/µs, T
Package
P-SOT-223
PG-SOT-223
j
= 25 °C, unless otherwise specified
Tape and Reel Information
E6327: 1000 pcs/reel
L6327: 1000 pcs/reel
jmax
=150°C
Rev. 1.21
Page 1
Symbol
I
I
dv/dt
V
P
T
D
D puls
j ,
GS
tot
T
stg
Marking
BSP297
BSP297
-55... +150
55/150/56
Class 1
Product Summary
V
R
I
D
Value
DS
DS(on)
0.66
0.53
2.64
±20
1.8
6
PG-SOT-223
4
2006-09-28
0.66
200
1.8
BSP297
1
Unit
A
kV/µs
V
W
°C
2
VPS05163
V
W
A
3

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BSP297L6327 Summary of contents

Page 1

SIPMOS Ò Small-Signal-Transistor Feature · N-Channel · Enhancement mode · Logic Level · dv/dt rated • Pb-free lead plating; RoHS compliant Type Package P-SOT-223 BSP297 PG-SOT-223 BSP297 Maximum Ratings Parameter Continuous drain current T =25° ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...

Page 4

Power dissipation tot A BSP297 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area parameter ...

Page 5

Typ. output characteristic parameter ° 1.3 3.4V A 3.8V 4V 1.1 4. 10V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 ...

Page 6

Drain-source on-state resistance DS(on) j parameter : BSP297 8 98% 2 typ 1 0 -60 - Typ. capacitances C = ...

Page 7

Typ. gate charge parameter 0.66 A pulsed BSP297 0 max 0 max 6 0 max 4 ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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