BSP318S Infineon Technologies, BSP318S Datasheet

MOSFET, N, LOGIC, SOT-223

BSP318S

Manufacturer Part Number
BSP318S
Description
MOSFET, N, LOGIC, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP318S

Transistor Polarity
N Channel
Continuous Drain Current Id
2.6A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
90mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
1.6V
Rohs Compliant
Yes
Package
SOT-223
Vds (max)
60.0 V
Rds (on) (max) (@10v)
90.0 mOhm
Rds (on) (max) (@4.5v)
150.0 mOhm
Rds (on) (max) (@2.5v)
-

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SIPMOS
Features
Type
BSP318S
Maximum Ratings,at T
Parameter
Continuous drain current
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche current,periodic limited by T
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Enhancement mode
A
jmax
A
N-Channel
Avalanche rated
Logic Level
d v /d t rated
= 2.6 A, V
= 2.6 A, V
= 25 °C
= 25 °C
= 150 °C
DS
DD
Small-Signal-Transistor
= 20 V, d i /d t = 200 A/µs,
= 25 V, R
Package
SOT-223
j
= 25 °C, unless otherwise specified
GS
= 25
Product Summary
Drain source voltage
Drain-Source on-state resistance R
Continuous drain current
Ordering Code
Q67000-S4002
jmax
jmax
Final data
Page 1
Symbol
I
I
E
I
E
d v /d t
V
P
T
D
D puls
AR
j ,
AS
AR
GS
tot
T
stg
Pin 1
-55... +150
55/150/56
G
V
I
Value
D
10.4
0.18
DS
DS(on)
2.6
2.6
1.8
60
20
6
4
Pin 2, 4
D
1999-10-28
BSP318S
0.09
2.6
60
1
PIN 3
Unit
A
mJ
A
mJ
kV/µs
V
W
°C
2
VPS05163
S
V
A
3

Related parts for BSP318S

BSP318S Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Final data Product Summary Drain source voltage Drain-Source on-state resistance R Continuous drain current Ordering Code Q67000-S4002 Symbol puls jmax AR E jmax tot Page 1 BSP318S 0.09 DS(on Pin 1 Pin Value 2.6 10.4 60 2.6 0. 1.8 -55... +150 stg 55/150/56 1999-10- ...

Page 2

... PCB is vertical without blown air. Final data Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS = 25 °C = 150 °C I GSS R DS(on) R DS(on) Page 2 BSP318S Values Unit min. typ. max K/W - 100 - - - 70 Values Unit min. typ. max 1.2 1.6 2 µ ...

Page 3

... Reverse transfer capacitance MHz GS DS Turn-on delay time 4 Rise time 4 Turn-off delay time 4 Fall time 4 Final data = 25 °C, unless otherwise specified j Symbol 2 d(on d(off Page 3 Values min. typ. max. 2.4 5.5 - 300 iss - 90 oss - 50 rss - BSP318S Unit - S 380 pF 120 1999-10-28 ...

Page 4

... Reverse recovery time 100 A/µ Reverse recovery charge 100 A/µ Final data = 25 °C, unless otherwise specified j Symbol Q G(th (plateau) Symbol Page 4 BSP318S Values Unit min. typ. max. - 0 Values Unit min. typ. max 2 10.4 - 0.95 1 0.1 0.15 µC 1999-10-28 ...

Page 5

... T A Transient thermal impedance Z thJA parameter : K 140.0µ Page BSP318S 100 120 = BSP318S single pulse - 1999-10-28 BSP318S °C 160 0.50 0.20 0.10 0.05 0.02 0. ...

Page 6

... V 5 Gate threshold voltage V GS(th) parameter 4.5 V 3.0 V 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 °C 100 180 - Page 6 BSP318S DS(on)max = 80 µ µ 140 °C - 100 1999-10- max typ min 200 T j ...

Page 7

... C oss 10 C rss Typ. gate charge parameter °C 120 160 T j Page µs p BSP318S °C typ 150 °C typ °C (98 150 °C (98 0.0 0.4 0.8 1.2 1.6 2.0 ) Gate = 2.6 A pulsed D BSP318S 8 0,2 V 0,8 DS max 1999-10-28 BSP318S V 2.4 3 max Gate ...

Page 8

... Drain-source breakdown voltage (BR)DSS j BSP318S -60 - Final data °C 100 180 T j Page 8 BSP318S 1999-10-28 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Final data Page 9 BSP318S 1999-10-28 ...

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