BUK652R1-30C NXP Semiconductors, BUK652R1-30C Datasheet
BUK652R1-30C
Specifications of BUK652R1-30C
Related parts for BUK652R1-30C
BUK652R1-30C Summary of contents
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... BUK652R1-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 16 December 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... V; see GS see Figure 18 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 17; Graphic symbol ...
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... Figure °C; see Figure °C mb ≤ 10 µs; T pulsed ° ≤ 120 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C Min Max - 30 [1] -16 16 [2] -20 20 [3] Figure 1 - 120 [3] Figure 1 - 120 - 960 - 263 -55 175 ...
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... T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK652R1-30C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C Min Typ Max - - 0. 003aae291 t p δ = ...
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... Figure 16; see Figure see Figure 17; see Figure see Figure 18; see Figure see Figure 17; see Figure 18 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C Min Typ Max Unit 1.8 2.3 2 3.3 V 1 0.02 1 µ ...
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... 003aae293 (A) 60 3.8 40 3.6 20 3.4 V ( (V) DS Fig 6. function of gate-source voltage; typical valuesvalues All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C Min Typ - 8188 - 1327 - 761 - 272 - 142 - 4.5 - 7 115 = 175 ° °C ...
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... GS Fig 8. 003aad806 V GS(th) (V) max (V) GS Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C N-channel TrenchMOS intermediate level FET 200 fs 150 100 Forward transconductance as a function of drain current; typical values 4 3 max @1mA ...
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... Fig 12. Sub-threshold drain current as a function of 003aae297 R 4.0 (m Ω ) 4.5 5.0 6.0 10.0 75 100 I (A) D Fig 14. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C N-channel TrenchMOS intermediate level FET - min typ - gate-source voltage 40 3 ...
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... Product data sheet 03aa27 120 180 ( ° Fig 16. Gate-source voltage as a function of gate Q GD 003aaa508 Fig 18. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C N-channel TrenchMOS intermediate level FET (V) 15V 8 24V ...
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... I S (A) C iss C oss C rss (V) DS Fig 20. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C N-channel TrenchMOS intermediate level FET 175 ° 0.3 0.6 0.9 voltage; typical values 003aae300 = 25 ° ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C N-channel TrenchMOS intermediate level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK652R1-30C v.2 20101216 • Modifications: Various changes to content. • Status changed from Objective to Product. BUK652R1-30C v.1 20100705 BUK652R1-30C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 BUK652R1-30C Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 December 2010 Document identifier: BUK652R1-30C ...