BUL1102E STMicroelectronics, BUL1102E Datasheet

TRANSISTOR, NPN, TO-220

BUL1102E

Manufacturer Part Number
BUL1102E
Description
TRANSISTOR, NPN, TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUL1102E

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
450V
Power Dissipation Pd
70W
Dc Collector Current
2A
Transistor Case Style
TO-220
No. Of Pins
3
Svhc
No SVHC (15-Dec-2010)
Alternate Case
RoHS Compliant
Dc Current Gain Hfe
35
Rohs Compliant
Yes

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BUL1102E������
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APPLICATIONS
DESCRIPTION
The device is manufactured using high voltage
Multi
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during Breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
ABSOLUTE MAXIMUM RATINGS
March 2003
Symbol
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FOUR LAMP ELECTRONIC BALLAST FOR:
CONFIGURATION;
FEED CONFIGURATION.
V
V
V
120 V MAINS IN PUSH-PULL
277 V MAINS IN HALF BRIDGE CURRENT
T
P
I
I
CES
CEO
EBO
I
CM
I
BM
T
stg
C
B
tot
j
Epitaxial
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Planar
technology for high
Parameter
p
c
<5 ms)
= 25
C
p
= 0)
<5 ms)
B
o
BE
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
1100
450
150
12
70
TO-220
4
8
2
4
BUL1102E
1
2
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/6

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BUL1102E Summary of contents

Page 1

... Base Current B I Base Peak Current ( Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j March 2003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTERNAL SCHEMATIC DIAGRAM = <5 ms) p <5 ms BUL1102E TO-220 Value Unit 1100 V 450 -65 to 150 C o 150 C 1/6 ...

Page 2

... BUL1102E THERMAL DATA R Thermal Resistance Junction-Case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE RESISTIVE LOAD t Storage Time s t Fall Time ...

Page 3

... DC Current Gain Collector Emitter Saturation Voltage Switching Time Resistive Load DC Current Gain Base Emitter Saturation Voltage Switching Time Inductive Load BUL1102E 3/6 ...

Page 4

... BUL1102E Reverse Biased SOA Figure 1: Energy Rating Test Circuit Figure 2: Resistive Load Switching Test Circuit 4/6 ...

Page 5

... BUL1102E inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.102 ...

Page 6

... BUL1102E Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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