IXFN200N10P IXYS SEMICONDUCTOR, IXFN200N10P Datasheet - Page 3

• Manufacturer Part Number: IXFN200N10P
• Description: MOSFET, N, SOT-227B
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFN200N10P

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 200A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 7.5mohm
• Rds(on) Test Voltage Vgs: 15V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
200
175
150
125
100
200
175
150
125
100
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
75
50
25
75
50
25
0
0
2
1
0
0
0
Fig. 5. R
V
V
GS
GS
0.2
0.5
50
Fig. 3. Output Characte r is tics
= 10V
= 15V - - - -
Fig. 1. Output Characte r is tics
V alue vs . Drain Curr e nt
DS(on)
0.4
100
1
V
V
I
0.6
Nor m alize d to I
V
GS
D
D S
V
GS
@ 150
150
1.5
D S
- A mperes
@ 25
= 10V
- V olts
= 10V
0.8
9V
- V olts
9V
200
º
º
C
C
2
1
6V
T
8V
7V
250
2.5
8V
J
7V
6V
5V
1.2
= 175
D
= 100A
T
J
= 25
300
º
1.4
3
C
º
C
350
1.6
3.5
12 0
10 0
350
300
250
200
150
100
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
8 0
6 0
4 0
2 0
50
0
0
2
1
-5 0
-50
Fig. 2. Exte nde d Output Characte r is tics
0
Fig. 4. R
Ex ternal Lead Current limit
V
0.5
V alue vs . Junction Te m pe r atur e
-2 5
-25
GS
Fig . 6. Dr ain C u r r e n t vs . C as e
= 10V
V
GS
1
0
0
T
DS(on
C
T
= 10V
1.5
J
- Degrees Centigrade
- Degrees Centigrade
25
25
)
T e m p e r atu r e
Norm alize d to I
V
@ 25
2
50
D S
50
I
D
2.5
= 200A
- V olts
º
C
75
75
IXFN 200N10P
3
9V
8V
6V
100
1 0 0
7V
3.5
I
D
D
= 100A
125
1 2 5
= 100A
4
150
1 5 0
4.5
175
1 7 5
5