16TTS12FPPBF Vishay, 16TTS12FPPBF Datasheet - Page 5

• Manufacturer Part Number: 16TTS12FPPBF
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),10A I(T),TO-220AB
• Manufacturer: Vishay

Specifications of 16TTS12FPPBF

• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94381
Revision: 26-May-08
100
0.01
0.1
10
0.1
0.001
10
0.0001
1
1
Recta ngula r ga te p ulse
a)Recommend ed loa d line for
b )Recommend ed load line for
VGD
ra ted d i/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated d i/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
IGD
For technical questions, contact: [e-mail]
0.01
0.001
TO-220AB FULL-PAK, 16 A
1000
Fig. 8 - Thermal impedance Z
100
Fig. 7 - On-State Voltage Drop Characteristics
10
S ingle Pulse
1
Phase Control SCR
0
Fig. 9 - Gate Characteristics
Instantaneous On-state Voltage (V)
16T T S ..FP S eries
Instantaneous Gate Current (A)
S quare Wave Pulse Duration (s)
(b)
16T T S..FP S eries
1
0.1
0.01
16TTS..FPPbF High Voltage Series
2
(a)
T = 25°C
T = 125°C
J
J
3
thJC
1
0.1
Frequency Limited by PG(AV)
Characteristics
4
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
16T T S ..FP S eries
Vishay High Power Products
(4) (3)
5
S teady S tate Value
(DC Operation)
10
1
(2)
(1)
100
10
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