3N251/1 Vishay, 3N251/1 Datasheet - Page 3
![Diode](/photos/22/4/220475/4073840_sml.jpg)
3N251/1
Manufacturer Part Number
3N251/1
Description
Diode
Manufacturer
Vishay
Datasheet
1.3N2511.pdf
(4 pages)
Specifications of 3N251/1
Diode Type
Bridge Rectifier
Peak Reflow Compatible (260 C)
No
Current Rating
1.5A
Leaded Process Compatible
No
Forward Voltage
1.3V
Forward Current If
1.5A
Package / Case
KBPM
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
800V
Rms Voltage (max)
560V
Peak Non-repetitive Surge Current (max)
60A
Avg. Forward Curr (max)
1.5@Ta=40CA
Rev Curr
5uA
Package Type
Case KBPM
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88531
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
0.01
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
T
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
J
= 25 °C
0.6
Instantaneous Forward Voltage (V)
20
T
0.8
J
= 25 °C
40
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
1.0
J
For technical questions within your region, please contact one of the following:
= 100 °C
T
J
= 125 °C
60
1.2
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
1.4
(15.2)
KBP005M thru KBP10M, 3N246 thru 3N252
0.60
MIN.
1.6
100
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
3