CM800HA-24H Powerex Inc, CM800HA-24H Datasheet - Page 2

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CM800HA-24H

Manufacturer Part Number
CM800HA-24H
Description
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2kV V(BR)CES,800A I(C)
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM800HA-24H

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 800A
Current - Collector (ic) (max)
800A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
180nF @ 10V
Power - Max
4800W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
CM800HA-24H
Manufacturer:
MITSUBISHI
Quantity:
26
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
CM800HA-24H
Manufacturer:
Quantity:
492
Price:
198
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM800HA-24H
Single IGBTMOD™ H-Series Module
800 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Max. Mounting Torque M4 G-E Terminal Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25 C unless otherwise specified
j
= 25 C unless otherwise specified
V
V
Symbol
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
GE(th)
V
C
C
d(on)
d(off)
GES
th(c-f)
CES
Q
j
th(j-c)
th(j-c)
Q
t
oes
FM
res
t
ies
t
= 25 C unless otherwise specified
rr
G
r
f
rr
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
C
CC
V
V
I
I
E
E
GE
GE1
= 800A, V
= 600V, I
= 800A, di
= 800A, di
V
V
V
I
I
C
= 0V, V
C
CC
I
CE
GE
E
= V
= 80mA, V
= 800A, V
= 800A, V
Test Conditions
Test Conditions
Test Conditions
= V
= 600V, I
= V
GE2
Per FWDi
Per IGBT
GE
C
CE
CES
GES
E
E
= 800A, V
= 15V, R
/dt = –1600A/ s
/dt = –1600A/ s
= 15V, T
= 10V, f = 1MHz
, V
, V
GE
CE
C
GS
GE
CE
= 800A,
= 15V
= 10V
= 0V
G
= 0V
= 0V
j
GS
= 150 C
= 4.2
Symbol
V
V
V
T
I
I
= 15V
RMS
CES
GES
P
CM
FM
I
T
I
stg
C
F
d
j
Min.
Min.
Min.
4.5
CM800HA-24H
–40 to +150
–40 to +125
1600*
1600*
1200
4800
1600
2500
800
800
95
26
13
4500
20
Typ.
Typ.
Typ.
6.0
2.7
2.4
5.9
0.026
0.058
0.018
Max.
Max.
Max.
1200
1000
5.0
0.5
7.5
3.6
3.5
180
350
250
500
64
36
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
in-lb
in-lb
in-lb
Units
Volts
Volts
Volts
Volts
Units
Units
C
C
mA
C/W
C/W
C/W
nC
ns
ns
nF
nF
nF
ns
ns
ns
A
C

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