SI1307DL-T1-E3 Vishay, SI1307DL-T1-E3 Datasheet

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SI1307DL-T1-E3

Manufacturer Part Number
SI1307DL-T1-E3
Description
P-Ch MOSFET SC-70-3 (SOT-323) 12V 290mohm @ 4.5V
Manufacturer
Vishay
Datasheet

Specifications of SI1307DL-T1-E3

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.29 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.85 A
Power Dissipation
290 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1307DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71077
S-63637—Rev. A, 01-Nov-99
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
–12
12
(V)
0.435 @ V
0.580 @ V
0.290 @ V
J
J
a
a
= 150 C)
= 150 C)
a
a
r
Parameter
Parameter
DS(on)
GS
GS
GS
a
a
= –2.5 V
= –1.8 V
= –4.5 V
( )
P-Channel 1.8-V (G-S) MOSFET
a
G
S
1
2
SC-70 (3-LEADS)
SOT-323
Top View
Steady State
Steady State
T
T
T
T
t
I
New Product
A
A
A
A
D
= 25 C
= 70 C
= 25 C
= 70 C
0.91
0.74
0.64
(A)
5 sec
3
D
Symbol
Symbol
T
R
R
R
V
J
V
I
P
P
, T
DM
thJA
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
LC
XX
Part # Code
Typical
5 secs
–0.28
Lot Traceability
and Date Code
0.34
0.22
315
360
285
0.91
0.72
–55 to 150
www.vishay.com FaxBack 408-970-5600
–12
8
3
Steady State
Maximum
Vishay Siliconix
–0.24
0.29
0.19
375
430
340
0.85
0.68
Si1307DL
Unit
Unit
C/W
C/W
W
W
V
V
A
A
A
C
2-1

Related parts for SI1307DL-T1-E3

SI1307DL-T1-E3 Summary of contents

Page 1

... stg Symbol Typical t 5 sec R R thJA thJA Steady State Steady State R thJF Si1307DL Vishay Siliconix Lot Traceability and Date Code Steady State Unit – 0.85 0.91 0.72 0. –0.28 –0.24 0.34 0. 0.22 0.19 –55 to 150 C Maximum Unit 315 375 C/W 360 ...

Page 2

... Si1307DL Vishay Siliconix Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... New Product 400 350 300 250 200 150 = 4.5 V 100 1.6 1.2 0.8 0 –50 1.6 1.2 0.8 0.4 0 1.0 1.2 0 Si1307DL Vishay Siliconix Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature – 100 125 T – Junction Temperature ( C) J On-Resistance vs ...

Page 4

... Si1307DL Vishay Siliconix Threshold Voltage 0.4 0 250 A D 0.2 0.1 0.0 –0.1 –0.2 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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