SI4409DY-T1-E3 Vishay, SI4409DY-T1-E3 Datasheet
SI4409DY-T1-E3
Manufacturer Part Number
SI4409DY-T1-E3
Description
P-CHANNEL 150-V (D-S) MOSFET
Manufacturer
Vishay
Specifications of SI4409DY-T1-E3
Rohs Compliant
YES
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.9 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4409DY-T1-E3
Manufacturer:
VISHAY
Quantity:
5 000
Part Number:
SI4409DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 95 °C/W.
Document Number: 70485
S-71276–Rev. A, 02-Jul-07
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
PRODUCT SUMMARY
V
C
- 150
DS
= 25 °C.
Ordering Information: Si4409DY-T1-E3 (Lead (Pb)-free)
(V)
G
S
S
S
1
2
3
4
1.2 at V
1.3 at V
Top View
r
SO-8
DS(on)
GS
GS
= - 10 V
J
(Ω)
= - 6 V
= 150 °C)
b, d
8
7
6
5
P-Channel 150-V (D-S) MOSFET
D
D
D
D
I
D
- 1.3
- 1.2
(A)
a
A
Q
= 25 °C, unless otherwise noted
4.8 nC
g
Steady State
(Typ)
New Product
t ≤ 5 sec
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % UIS Tested
• Active Clamp Switch
• Isolated DC/DC Converters
Symbol
R
R
thJA
thJF
Symbol
T
G
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
P-Channel MOSFET
stg
®
Power MOSFET
Typical
S
D
47
22
- 55 to 150
- 0.9
- 0.7
- 0.9
2.2
1.4
Limit
- 150
± 20
- 1.3
- 1.0
- 1.3
Maximum
0.8
4.6
2.9
- 2
4
b,c
b,c
b,c
b,c
b,c
Vishay Siliconix
55
27
Si4409DY
www.vishay.com
°C/W
Unit
RoHS
COMPLIANT
Unit
mJ
°C
W
V
A
1
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