SI5401DC-T1-E3 Vishay, SI5401DC-T1-E3 Datasheet

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.2A I(D),LLCC

SI5401DC-T1-E3

Manufacturer Part Number
SI5401DC-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.2A I(D),LLCC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5401DC-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
32 mOhm @ 5.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI5401DC-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5401DC-T1-E3
Manufacturer:
Vishay Siliconix
Quantity:
462
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73225
S-83054-Rev. B, 29-Dec-08
Ordering Information: Si5401DC-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
DS
- 20
(V)
D
1206-8 ChipFET
D
Bottom View
0.032 at V
0.040 at V
0.053 at V
D
D
S
R
Si5401DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
DS(on)
D
GS
GS
GS
1
®
G
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
a
J
a
= 150 °C)
a
P-Channel 20-V (D-S) MOSFET
Marking Code
a
BO
I
D
- 7.1
- 6.4
- 5.5
(A)
XXX
Part # Code
b, c
Lot Traceability
and Date Code
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
16.5
T
T
T
T
(Typ.)
A
A
A
A
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Ultra-Low On-Resistance
• Thermally Enhanced ChipFET
• 40 % Smaller Footprint than TSOP-6
• Load Switch, PA Switch, and Battery Switch for Portable
Symbol
Symbol
T
R
R
J
Available
Devices
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
- 7.1
- 5.1
- 2.1
G
5 s
2.5
1.3
40
80
15
P-Channel MOSFET
- 55 to 150
- 20
- 20
260
± 8
S
D
Steady State
Maximum
®
- 5.2
- 3.7
- 1.1
1.3
0.7
50
95
20
Vishay Siliconix
Package
Si5401DC
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI5401DC-T1-E3

SI5401DC-T1-E3 Summary of contents

Page 1

... V GS 1206-8 ChipFET ® Marking Code Bottom View Ordering Information: Si5401DC-T1-E3 (Lead (Pb)-free) Si5401DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current a Continuous Source Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5401DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73225 S-83054-Rev. B, 29-Dec °C J 0.8 1.0 1.2 Si5401DC Vishay Siliconix 2000 1800 1600 1400 C iss 1200 1000 800 600 C 400 oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si5401DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 250 µA D 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited by R DS(on D(on) ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73225. Document Number: 73225 S-83054-Rev. B, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5401DC Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... E 1.825 1.90 1.975 0.072 E 1.55 1.65 1.70 0.061 1 e 0.65 BSC L 0.28 − 0.42 0.011 S 0.55 BSC 5_Nom Package Information Vishay Siliconix Backside View DETAIL X INCHES Nom Max − 0.043 0.012 0.014 0.006 0.008 − 0.0015 0.120 0.122 ...

Page 7

... The addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further example of this method is implemented on the Vishay Siliconix Evaluation Board described in the next section (Figure 3). G THE VISHAY SILICONIX EVALUATION BOARD FOR THE SINGLE 1206-8 The ChipFET 1206-08 evaluation board measures 0 ...

Page 8

... AN811 Vishay Siliconix Front of Board ChipFETr THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 1206-8 ChipFET measured as junction-to-foot thermal resistance is 15_C/W typical, 20_C/W maximum for the single device. The “foot” is the drain lead of the device as it connects with the body. This is identical to the ...

Page 9

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET Return to Index Return to Index www.vishay.com 2 ® 0.093 (2.357) 0.026 0.016 (0.650) (0.406) Recommended Minimum Pads Dimensions in Inches/(mm) 0.010 (0.244) Document Number: 72593 Revision: 21-Jan-08 ...

Page 10

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords