SI5401DC-T1-E3 Vishay, SI5401DC-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI5401DC-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.2A I(D),LLCC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5401DC-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5401DC-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73225.
Document Number: 73225
S-83054-Rev. B, 29-Dec-08
0.01
0.1
2
1
10
-4
0.05
0.02
0.1
0.2
Duty Cycle = 0.5
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si5401DC
www.vishay.com
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