SI7212DN-T1-GE3 Vishay, SI7212DN-T1-GE3 Datasheet - Page 4
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SI7212DN-T1-GE3
Manufacturer Part Number
SI7212DN-T1-GE3
Description
DUAL N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Specifications of SI7212DN-T1-GE3
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
36 mOhm @ 6.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1.6V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7212DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7212DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7212DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
0
Threshold Voltage
T
J
25
- Temperature (°C)
Single Pulse
10
-3
50
I
D
= 250
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
µA
100
0.1
10
100
1
0.1
10
-2
Limited by R
* V
Safe Operating Area, Junction-to-Ambient
125
Limited
I
GS
D(on)
> minimum V
150
V
Square Wave Pulse Duration (s)
Single Pulse
DS
T
A
DS(on)
- Drain-to-Source Voltage (V)
= 25 °C
1
10
*
-1
GS
BVDSS Limited
at which R
10
DS(on)
I
DM
50
40
30
20
10
0
1
Limited
0.001
is specified
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.01
100
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
-
Time (s)
T
t
A
1
= P
S09-1815-Rev. F, 14-Sep-09
1
t
2
Document Number: 73128
DM
Z
thJA
thJA
100
t
t
1
2
10
(t)
= 77 °C/W
100
600
600