ST173S10PFP1 Vishay, ST173S10PFP1 Datasheet - Page 7

• Manufacturer Part Number: ST173S10PFP1
• Description: SILICON CONTROLLED RECTIFIER,1kV V(DRM),175A I(T),TO-209varM16
• Manufacturer: Vishay

Specifications of ST173S10PFP1

• Breakover Current Ibo Max: 4900 A
• Rated Repetitive Off-state Voltage Vdrm: 1000 V
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• Forward Voltage Drop: 2.07 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-93
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94367
Revision: 29-Apr-08
100 000
10 000
1000
100
10
10
100
t
0.1
p
10
1
0.001
ST173S Series
Sinusoidal pulse
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Pulse Basewidth (µs)
rated dI/dt: 20 V, 10 Ω; t
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
r
100
0.1
≤ 1 µs
0.2
0.3
0.5
1
2
4
7.5
20 joules per pulse
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1000
0.01
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
V
GD
I
r
GD
Inverter Grade Thyristors
≤ 1 µs
(Stud Version), 175 A
Device: ST173S Series
10 000
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
0.1
(b)
(a)
100 000
10 000
1
1000
100
Frequency limited by P
10
10
Vishay High Power Products
t
p
(1) P
(2) P
(3) P
(4) P
ST173S Series
Rectangular pulse
dI/dt = 50 A/µs
ST173SPbF Series
Pulse Basewidth (µs)
GM
GM
GM
GM
100
10
0.1
0.4
(1)
G(AV)
= 10 W, t
= 20 W, t
= 40 W, t
= 60 W, t
0.2
0.3
0.5
(2)
1
p
p
p
p
2 3
= 20 ms
= 10 ms
= 5 ms
= 3.3 ms
1000
(3)
5 10
20 joules per pulse
(4)
100
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10 000
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