H11G2 Fairchild Semiconductor, H11G2 Datasheet - Page 3

• Manufacturer Part Number: H11G2
• Description: Transistor Output Optocouplers DIP-6 HV PHOTO DARL
• Manufacturer: Fairchild Semiconductor

Specifications of H11G2

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Photodarlington
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 1 V
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Power Dissipation: 260 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: H11G2_NL

©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
Electrical Characteristics
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
*All Typical values at T
EMITTER
EMITTER
SWITCHING TIMES
Symbol
DETECTOR
Symbol
Symbol
BV
BV
BV
V
I
BV
CE(SAT)
CEO
CTR
R
C
V
C
t
V
I
t
OFF
V
T
R
CEO
CBO
EBO
ON
F
ISO
J
ISO
ISO
A
F
R
Forward Voltage
Forward Voltage
Temp. Coefficient
Reverse Breakdown
Voltage
Junction Capacitance
Reverse Leakage
Current
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Leakage Current
Collector to Emitter
Current Transfer
Ratio, Collector to
Emitter
Saturation Voltage
Turn-on Time
Turn-off Time
Isolation Voltage
Isolation Resistance
Isolation Capacitance
Characteristic
Characteristics
Characteristic
A
= 25°C
I
I
V
V
V
I
I
V
V
V
V
V
I
I
I
I
I
R
V
Pulse Width
F
R
C
C
F
F
F
F
F
(T
F
F
R
CE
CE
CE
CE
CE
CE
L
= 10mA
Test Conditions
= 10mA, V
= 1mA, V
= 16mA, I
= 1mA, I
= 20mA, I
= 10µA
= 1.0mA, I
= 100µA
= 0V, f = 1MHz
= 1V, f = 1MHz
A
= 100 , I
= 3.0V
f = 60Hz, t = 1 sec.
V
f = 1MHz
= 80V, I
= 60V, I
= 30V, I
= 80V, I
= 60V, I
= 5V, f
Test Conditions
= 25°C unless otherwise specified.)
Test Conditions
I-O
= 500 VDC
C
CE
F
F
F
F
F
C
C
F
F
= 1mA
CE
30Hz,
= 0
= 0
= 0
= 0, T
= 0, T
= 50mA
= 50mA
= 10mA,
300µs
= 0
= 5V
= 1V
A
A
= 80°C
= 80°C
3
H11G1M/2M
H11G1M/2M
H11G1M/2M
H11G1M/2M
Device
H11G3M
H11G3M
Device
All
All
All
All
All
H11G1M
H11G2M
H11G3M
H11G1M
H11G2M
H11G3M
H11G1M
H11G2M
H11G3M
H11G1M
H11G2M
Device
All
All
All
All
All
All
Min.
7500
10
100 (1000)
11
2 (200)
5 (500)
Min.
Min.
100
100
3.0
80
55
80
55
7
Typ.*
0.2
Typ.*
0.85
0.75
0.85
100
Typ.*
0.001
5
-1.8
1.3
25
50
65
10
Max.
Max.
1.0
1.0
1.2
Max.
1.50
100
100
10
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V
AC
Units
mA (%)
Units
pF
PEAK
mV/°C
µs
µs
Unit
V
µA
nA
µA
pF
V
V
V
V
V