H11A817BSD Fairchild Semiconductor, H11A817BSD Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
H11A817BSD
Manufacturer Part Number
H11A817BSD
Description
Transistor Output Optocouplers Optocoupler SM-DIP4 Phototransistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.H11A817B300W.pdf
(11 pages)
Specifications of H11A817BSD
Maximum Fall Time
18 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
18 us
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.2 V
Isolation Voltage
5000 Vrms
Current Transfer Ratio
260 %
Maximum Forward Diode Voltage
1.5 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-4 Gull Wing
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
H11A817BSD
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Test Circuit
Figure 13. Test Circuit
Test Circuit for Response Time
Input
Vcc
Output
10%
R
R
L
Input
Output
D
90%
td
ts
tr
tf
Test Circuit for Frequency Response
Vcc
R
R
L
D
Output
6
www.fairchildsemi.com
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8