H11A817BSD Fairchild Semiconductor, H11A817BSD Datasheet - Page 9
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H11A817BSD
Manufacturer Part Number
H11A817BSD
Description
Transistor Output Optocouplers Optocoupler SM-DIP4 Phototransistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.H11A817B300W.pdf
(11 pages)
Specifications of H11A817BSD
Maximum Fall Time
18 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
18 us
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.2 V
Isolation Voltage
5000 Vrms
Current Transfer Ratio
260 %
Maximum Forward Diode Voltage
1.5 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-4 Gull Wing
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
H11A817BSD
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Carrier Tape Specifications
Note:
All dimensions are in millimeters
Tape wide
Pitch of sprocket holes
Distance of compartment
Distance of compartment to compartment
Compartment
Ø1.55±0.05
Description
Symbol
9
A0
B0
K0
P
P
P
W
F
0
2
1
P
2
Dimensions in mm (inches)
P
1
10.45 ± 0.1 (.411)
5.30 ± 0.1 (.209)
4.25 ± 0.1 (.167)
7.5 ± 0.1 (.295)
12 ± 0.1 (.472)
2 ± 0.1 (.079)
16 ± 0.3 (.63)
4 ± 0.1 (.15)
A0
P
0
B0
0.3±0.05
F
1.75±0.1
www.fairchildsemi.com
W
K0