GBJ2010-G Comchip Technology, GBJ2010-G Datasheet - Page 2
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GBJ2010-G
Manufacturer Part Number
GBJ2010-G
Description
BRIDGE DIODE 20A 1000V GBJ
Manufacturer
Comchip Technology
Datasheet
1.GBJ20005-G.pdf
(2 pages)
Specifications of GBJ2010-G
Voltage - Peak Reverse (max)
1000V
Current - Dc Forward (if)
20A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
GBJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
100
1.0
Glass Passivated Bridge Rectifiers
10
25
20
10
15
5
1.0
0
MDS0912005A
0
T
J
=25°C,f=1MH
FIG.3-TYPICAL JUNCTION CAPACITANCE
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
FIG.1-FORWARD CURRENT DERATING CURVE
20
RATINGS AND CHARACTERISTIC CURVES GBJ20005-G thru GBJ2010-G
REVERSE VOLTAGE,(VOLTS)
40
Z
CASE TEMPERATURE, °C
WITHOUT HEATSINK
WITH HEATSINK
60
10.0
80
1000
100
1.0
10
0.1
100
0
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.5-TYPICAL REVERSE CHARACTERISTICS
120
20
100
T
T
T
140
T
J
J
J
J
=100°C
=125°C
=50°C
=25°C
40
60
100
0.01
1.0
10
0.1
250
100
300
200
150
50
0
0
80
1
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4-TYPICAL FORWARD CHARACTERISTICS
0.2
2
100
FIG.2-MAXMUN NON-REPETITIVE
0.4
NUMBER OF CYCLES AT 60Hz
0.6
SURGE CURRENT
5
0.8
PULSE WIDTH 300us
10
1.0
T
SINGLE -SINE - WAVE
(JEDEC METHOD)
J
T
=150°C
J
= 25°C
20
1.2
1.4
Page 2
50
1.6
100
1.8