MJD127 ON Semiconductor, MJD127 Datasheet - Page 2
![Darlington Transistors 8A 100V Bipolar](/photos/26/98/269848/to252_sml.jpg)
MJD127
Manufacturer Part Number
MJD127
Description
Darlington Transistors 8A 100V Bipolar
Manufacturer
ON Semiconductor
Datasheet
1.MJD127.pdf
(7 pages)
Specifications of MJD127
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
TO-252-3 (DPAK)
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
100 V
Maximum Dc Collector Current
8 A
Maximum Collector Cut-off Current
10 uA
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
8 A
Dc Collector/base Gain Hfe Min
100, 1000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJD127
Manufacturer:
ON Semiconductor
Quantity:
247
Part Number:
MJD127
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MJD127G
Manufacturer:
ON
Quantity:
20 000
Company:
Part Number:
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Manufacturer:
ON
Quantity:
12 500
Part Number:
MJD127G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MJD127T4
Manufacturer:
ROHM
Quantity:
3 980
Part Number:
MJD127T4
Manufacturer:
ST
Quantity:
20 000
Part Number:
MJD127T4G
Manufacturer:
ON/安森美
Quantity:
20 000
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage (Note 2)
Base−Emitter On Voltage
Current−Gain−Bandwidth Product
Output Capacitance
Small−Signal Current Gain
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
(I
C
C
C
C
C
C
C
C
C
CE
CB
BE
CB
= 30 mAdc, I
= 4 Adc, V
= 8 Adc, V
= 4 Adc, I
= 8 Adc, I
= 8 Adc, I
= 4 Adc, V
= 3 Adc, V
= 3 Adc, V
= 5 Vdc, I
= 50 Vdc, I
= 100 Vdc, I
= 10 Vdc, I
B
B
B
CE
CE
CE
CE
CE
= 16 mAdc)
= 80 mAdc)
= 80 mAdc)
C
B
B
E
= 0)
= 4 Vdc)
= 4 Vdc)
= 4 Vdc)
= 4 Vdc, f = 1 MHz)
= 4 Vdc, f = 1 kHz)
E
= 0)
= 0)
= 0, f = 0.1 MHz)
= 0)
2.5
1.5
0.5
Characteristic
T
A
2
1
0
25
20
15
10
T
5
0
(T
C
25
C
= 25_C unless otherwise noted)
50
SURFACE
Figure 1. Power Derating
MOUNT
http://onsemi.com
T
T
C
A
T, TEMPERATURE (°C)
75
2
100
MJD127
MJD122
125
V
Symbol
V
V
V
CEO(sus)
I
I
I
CE(sat)
BE(sat)
BE(on)
|h
h
C
CEO
CBO
EBO
h
FE
fe
ob
fe
|
150
1000
Min
100
100
300
−
−
−
−
−
−
−
4
−
−
12,000
Max
300
200
4.5
2.8
10
10
−
2
−
2
4
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
−
−