PEMF21 T/R NXP Semiconductors, PEMF21 T/R Datasheet

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PEMF21 T/R

Manufacturer Part Number
PEMF21 T/R
Description
Digital Transistors TRNS DOUBL RET TAPE7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PEMF21 T/R

Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Package / Case
SOT-666-6
Collector- Emitter Voltage Vceo Max
50 V at NPN, 12 V at PNP
Peak Dc Collector Current
100 mA at NPN, 500 mA at PNP
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PEMF21,115
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMF21
12 V PNP loadswitch
Product data sheet
2004 Jan 12

Related parts for PEMF21 T/R

PEMF21 T/R Summary of contents

Page 1

DATA SHEET PEMF21 12 V PNP loadswitch Product data sheet DISCRETE SEMICONDUCTORS M3D744 2004 Jan 12 ...

Page 2

... NXP Semiconductors 12 V PNP loadswitch FEATURES • Low V transistor and resistor-equipped transistor in CEsat one package • Very small 1.6 × 1.2 mm ultra thin package • Reduced component count. APPLICATIONS • Line switches • Battery charger switches • Power supply switches • Drive switches • ...

Page 3

... NXP Semiconductors 12 V PNP loadswitch LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Transistor TR1 V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors 12 V PNP loadswitch CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Transistor TR1 I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I CEsat R equivalent on-resistance CEsat V base-emitter saturation voltage BEsat V base-emitter turn-on voltage ...

Page 5

... NXP Semiconductors 12 V PNP loadswitch 600 handbook, halfpage h FE 500 (1) 400 300 (2) 200 (3) 100 0 −1 −10 −1 −10 = −2 V. Transistor TR1 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. ...

Page 6

... NXP Semiconductors 12 V PNP loadswitch −10 3 handbook, halfpage V CEsat (mV) −10 2 −10 −1 −1 −10 −1 −10 Transistor TR1 20 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. 1 handbook, halfpage ...

Page 7

... NXP Semiconductors 12 V PNP loadswitch 2 10 handbook, halfpage V i(on) ( −1 10 − Transistor TR2 0 −40 °C. (1) T amb = 25 °C. (2) T amb = 100 °C. (3) T amb Fig.10 Input-on voltage as a function of collector current; typical values. 2004 Jan 12 MHC705 handbook, halfpage V i(off) (1) (2) ( (mA) Transistor TR2 ...

Page 8

... NXP Semiconductors 12 V PNP loadswitch PACKAGE OUTLINE Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2004 Jan scale 1.3 1.7 0.3 1.0 0.5 1.1 1.5 ...

Page 9

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 10

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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