PTZTE255.1B Rohm Semiconductor, PTZTE255.1B Datasheet - Page 2

• Manufacturer Part Number: PTZTE255.1B
• Description: DIODE ZENER 5.1V 1W SOD-106
• Manufacturer: Rohm Semiconductor

Specifications of PTZTE255.1B

• Voltage - Zener (nom) (vz): 5.1V
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Power - Max: 1W
• Impedance (max) (zzt): 8 Ohm
• Mounting Type: Surface Mount
• Package / Case: SOD-106, PMDS
• Operating Temperature: -55°C ~ 150°C
• Zener Voltage: 5.4 V
• Voltage Tolerance: 6 %
• Zener Current: 40 mA
• Power Dissipation: 1 W
• Maximum Reverse Leakage Current: 20 uA
• Maximum Zener Impedance: 8 Ohms
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -
• Voltage - Forward (vf) (max) @ If: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: PTZTE255.1BTR

Diodes
PTZ 3.6B
PT
PT
PT
PT
PT
PT
PT
PT
PT
PT
PTZ 1
PTZ 1
PTZ 1
PTZ 1
PTZ 1
PTZ 1
PTZ 1
PTZ 2
PTZ 2
PTZ 2
PTZ 2
PTZ 3
PTZ 3
PTZ 3
(
(
Electrical characteristics (Ta=25 C)
Marking (TYPE NO.)
TYP.
Z 3.9B
Z 4.3B
Z 4.7B
Z 5.1B
Z 5.6B
Z 6.2B
Z 6.8B
Z 7.5B
Z 8.2B
Z 9.1B
)The zener voltage(Vz) is measured 40ms after power is supplied.
)The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current
on the regulated current(Iz)
PTZ 3.6B
PTZ 3.9B
PTZ 4.3B
PTZ 4.7B
PTZ 5.1B
PTZ 5.6B
PTZ 6.2B
PTZ 6.8B
PTZ 7.5B
0B
1B
2B
3B
5B
6B
8B
0B
2B
4B
7B
0B
3B
6B
TYPE
10.000
11.000
12.000
13.300
14.700
16.200
18.000
20.000
22.000
24.000
27.000
30.000
33.000
36.000
3.600
3.900
4.300
4.700
5.100
5.600
6.200
6.800
7.500
8.200
9.100
MIN.
Zener voltage Vz(V)
10.310
11.510
12.500
13.820
15.350
16.860
19.000
20.820
23.850
25.310
28.700
31.570
34.950
39.240
3.813
4.136
4.572
4.924
5.368
5.856
6.509
7.280
7.889
8.655
9.747
TYP.
TYPE NO.
3.6B
3.9B
4.3B
4.7B
5.1B
5.6B
6.2B
6.8B
7.5B
10.200
11.200
12.300
13.500
15.000
16.500
18.300
20.300
22.400
24.500
27.600
30.800
34.000
37.000
40.000
4.000
4.400
4.800
5.200
5.700
6.300
7.000
7.700
8.400
9.300
MAX.
PTZ 8.2B
PTZ 9.1B
PTZ 10B
PTZ 11B
PTZ 12B
PTZ 13B
PTZ 15B
PTZ 16B
PTZ 18B
Iz(mA) Max. Iz(mA)
TYPE
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
15
15
15
10
10
10
12
12
resistance
14
Operating
8
8
6
6
4
4
6
6
8
8
Zz( )
TYPE NO.
8.2B
9.1B
10B
11B
12B
13B
15B
16B
18B
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
10
10
10
10
10
20
10
Symbol
Reverse current
MAX.
60
40
20
20
20
20
20
20
20
20
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
IR(μA)
PTZ 20B
PTZ 22B
PTZ 24B
PTZ 27B
PTZ 30B
PTZ 33B
PTZ 36B
TYPE
VR(V)
10.0
11.0
12.0
13.0
15.0
17.0
19.0
21.0
23.0
25.0
27.0
1.0
1.0
1.0
1.0
1.0
1.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
TYP. Iz(mA)
15.0
21.6
24.6
27.5
30.8
37.0
10.1
11.8
13.3
17.4
19.4
-2.8
-2.4
-2.1
-1.7
-0.6
Temperature
5.0
coeficiency
1.4
2.5
3.2
4.2
5.9
6.9
7.9
8.7
* z(mV/ )
20B
22B
24B
27B
30B
33B
36B
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
ESD breakdown voltage
30kV
MIN.
Rev.E
ESD(kV)
PTZ12B
Test Condition
C=150pF
R=330
10 times
reverse:
forward
and
2/4