1N5931BRLG ON Semiconductor, 1N5931BRLG Datasheet - Page 5

• Manufacturer Part Number: 1N5931BRLG
• Description: DIODE ZENER 18V 3W DO-41
• Manufacturer: ON Semiconductor
• Series: Surmetic™r

Specifications of 1N5931BRLG

• Voltage - Zener (nom) (vz): 18V
• Voltage - Forward (vf) (max) @ If: 1.5V @ 200mA
• Current - Reverse Leakage @ Vr: 1µA @ 13.7V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (max) (zzt): 12 Ohm
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Operating Temperature: -65°C ~ 200°C
• Zener Voltage Vz Typ: 18V
• Power Dissipation Pd: 3W
• Operating Temperature Range: -65°C To +200°C
• Diode Case Style: DO-41
• No. Of Pins: 2
• Termination Type: Axial Leaded
• Leakage Current Max: 1µA
• Rohs Compliant: Yes
• Diode Type: Zener
• Peak Reflow Compatible (260 C): Yes
• Zener Voltage: 18 V
• Voltage Tolerance: 5 %
• Zener Current: 83 mA
• Power Dissipation: 3 W
• Maximum Reverse Leakage Current: 1 uA
• Maximum Zener Impedance: 12 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1N5931BRLG; 1N5931BRLGOSTR

APPLICATION NOTE
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
q
P
depends on the device mounting method. q
30−40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of T
may be determined by:
LA
D
Since the actual voltage available from a given zener
Lead Temperature, T
The temperature of the lead can also be measured using a
is the power dissipation. The value for q
is the lead-to-ambient thermal resistance (°C/W) and
T
T
L
L
J
= q
, should be determined from:
= T
LA
L
P
+ DT
D
L
, the junction temperature
+ T
JL
A
LA
LA
will vary and
is generally
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5
DT
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
of P
Changes in voltage, V
q
from Figures 5 and 6.
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
VZ
For worst-case design, using expected limits of I
Under high power-pulse operation, the zener voltage will
Data of Figure 2 should not be used to compute surge
JL
, the zener voltage temperature coefficient, is found
D
is the increase in junction temperature above the lead
and the extremes of T
DT
Z
DV = q
, can then be found from:
JL
= q
VZ
J
JL
DT
(DT
P
D
J
J
) may be estimated.
Z
, limits