DDB6U100N16R Infineon Technologies, DDB6U100N16R Datasheet

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DDB6U100N16R

Manufacturer Part Number
DDB6U100N16R
Description
Discrete Semiconductor Modules 1600V 100A UN-CNTL
Manufacturer
Infineon Technologies
Type
Discrete Semiconductor Moduler
Datasheet
1.DDB6U100N16R.pdf (7 pages)

Specifications of DDB6U100N16R

Mounting Style
Through Hole
Output Current
60 A
Reverse Voltage
1600 V
Package / Case
DDB6
Gate Trigger Current
5 mA
Packages
AG-ECONO2-1
Vdrm/ Vrrm (v)
1,600.0 V
Ifsm (max)
550.0 A
Configuration
3 phase bridge rectifier uncontrolled
Housing
EconoBRIDGE™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
DDB6U100N16R
Manufacturer:
EUPEC
Quantity:
26
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
DDB6U100N16R
Manufacturer:
TOSHIBA
Quantity:
300
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
DDB6U100N16R
Quantity:
55
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
DDB6U100N16RR
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
DDB6U100N16RR
Quantity:
55
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert (pro Element)
RMS forward current (per chip)
Ausgangsstrom
output current
Stoßstrom-Grenzwert
surge forward current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
forward slope resistance
Sperrstrom
reverse current
Isolations-Prüfspannung
insulation test voltage
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
max. junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
BIP PPE 4
Technische Information / Technical Information
Rectifier Diode Module
Netz-Dioden-Modul
rev. 2
26. Okt 05
DD B6U 100 N 16 (ECONO)
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
RMS, f = 50Hz, t = 1min
RMS, f = 50Hz, t = 1sec
pro Modul / per module,
pro Element / per chip,
pro Modul / per module, DC
pro Element / per chip, DC
pro Modul / per module
pro Element / per chip
vj
vj
C
C
A
A
A
A
vj
vj
vj
vj
vj
vj
vj
vj
= - 40°C...T
= + 25°C...T
= 100°C
= 97°C
= 45°C, KP 0,5 S
= 45°C, KP 0,33 S
= 35°C, KP 0,41 S (V
= 35°C, KP 0,33 S (V
= 25°C, t
= T
= 25°C, t
= T
= T
= T
= T
= T
vj max
vj max
vj max
vj max
vj max
vj max,
, t
, t
, i
v
p
p
F
R =
p
p
= 10ms
= 10ms
= 100A
= 10ms
= 10ms
vj max
vj max
V
RRM
A 14/05
L
L
= 120°rect
= 45l/s)
= 90l/s)
= 120°rect
V
V
I
I
I
I²t
v
V
r
i
V
R
R
T
T
T
R
FRMSM
d
FSM
T
F
vj max
c op
stg
RRM
RSM
(TO)
ISOL
thJC
thCK
Seite/page 1(6)
max.
max.
max. 0,191
max. 1,150
max. 0,147
max. 0,880
max. 0,033
max. 0,200
N
- 40...+150
- 40...+150
1600
1700
2100
1500
1,55
0,75
100
104
104
104
650
550
150
5,5
2,5
3,0
60
58
75
5
V
V
A
A
A
A
A
A
A
A
A
A²s
A²s
V
V
m
mA
kV
kV
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
B6

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DDB6U100N16R Summary of contents

Page 1

Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Stoßspitzensperrspannung non-repetitive peak reverse voltage Durchlaßstrom-Grenzeffektivwert (pro Element) RMS forward current (per chip) Ausgangsstrom ...

Page 2

Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Si-Elemente mit Lötkontakt, glaspassiviert Si-pellets with soldered contact, glass-passivated Innere Isolation internal insulation Anzugsdrehmoment für mechanische Befestigung mounting torque Gewicht ...

Page 3

Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module BIP PPE 4 rev B6U 100 N 16 (ECONO) 26. Okt Seite/page 3(6) ...

Page 4

Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module Analytische Elemente des transienten Wärmewiderstandes Z Analytical elements of transient thermal impedance Z Pos 0,47800 0,28200 0,05300 0,06500 thn s 0,30200 0,03780 0,00400 0,00109 ...

Page 5

Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module 1,40 1,20 1,00 0,80 0,60 0,40 0,20 0,00 0,001 Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per arm Z Parameter: Stromflußwinkel / Current conduction angle BIP PPE 4 rev. ...

Page 6

Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module 160 150 140 130 120 110 100 Höchstzulässige Gehäusetemperatur / Maximum allowable case temperatur T BIP PPE 4 rev ...

Page 7

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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