T1989N18TOF Infineon Technologies, T1989N18TOF Datasheet - Page 8
T1989N18TOF
Manufacturer Part Number
T1989N18TOF
Description
Discrete Semiconductor Modules 1800V 1990A
Manufacturer
Infineon Technologies
Type
Discrete Semiconductor Moduler
Datasheet
1.T1989N18TOF.pdf
(10 pages)
Specifications of T1989N18TOF
Mounting Style
Through Hole
Output Current
4200 A
Reverse Voltage
1800 V
Package / Case
T1989
Gate Trigger Current
250 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
T1989N18TOF
Quantity:
13
MA2-BE / 15 Aug 1995, K.-A. Rüther
N
Phase Control Thyristor
100000
100
0,1
10000
10
1000
1
10
Netz-Thyristor
1
Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P
Steuercharakteristik v
Gate characteristic v
Sperrverzögerungsladung / Recovered charge Q
Datenblatt / Data sheet
a - 20W / 10ms
Parameter: Durchlaßstrom / On-state current i
100
T
vj
= T
Steuerkennlinie
vjmax
A 122/95
Zündverzug
G
, v
G
= f (i
T1989N
= f (i
R
b - 40W / 1ms
≤ 0,5 V
G
G
) with triggering area for V
i
) mit Zündbereichen für V
G
[mA]
RRM
10
, V
RM
c - 60W / 0,5ms
= 0,8 V
RRM
1000
r
TM
= f(di/dt)
D
D
= 12 V
= 12 V
-di/dt [A/µs]
Seite/page
a
GM
= f (t
b
g
) :
i
TM
c
= 4000A
10000
2000A
1000A
8/10
500A
200A
100A
100