T508N16TOF Infineon Technologies, T508N16TOF Datasheet

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T508N16TOF

Manufacturer Part Number
T508N16TOF
Description
Discrete Semiconductor Modules THY/DIODE DISC 50MM
Manufacturer
Infineon Technologies
Datasheet

Specifications of T508N16TOF

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
T508N16TOF
Manufacturer:
SINGATRON
Quantity:
101
Price:
Netz-Thyristor
Phase Control Thyristor
Elektrische Eigenschften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak foward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMSM on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state voltage
v
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündener Steuerstrom
gate non-trigger current
Nicht zündene Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse currents
Zündverzug
gate controlled delay time
1) 1800 V auf Anfrage / 1800 V on demand
SZ-AM / 99-07-26, K.-A.Rüther
Technische Information / Technical Information
T
= A + B x i
T
+ C x ln (i
T
+ 1) + D x
i
T
T 508 N 12 ...18
T
T
T
T
T
T
T
T
DIN IEC 747-6
f=50 Hz, v
di
T
5.Kennbuchstabe / 5th letter F
T
T
T
T
T
T
T
T
T
T
T
i
t
T
v
DIN IEC 747-6
T
i
A
GM
GM
g
D
vj
vj
vj
C
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
G
= 20 µs
= V
/dt = 1 A/µs
= - 40°C...T
= - 40°C...T
= + 25°C...T
= 85 °C
= 25°C, t
= T
= 25°C, t
= T
= T
= T
= T
= T
= T
= 25°C, v
= 25°C, v
= T
= T
= T
= 25°C, v
= 25°C, v
= T
= 25°C
= 1 A, di
= 1 A, di
DRM
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
, vR = V
L
, t
, t
, v
, i
, v
,v
,v
= 10V, i
G
G
p
p
D
D
D
D
D
D
p
p
T
D
D
/dt = 1 A/µs
/dt = 1 A/µs
= 10 ms
= 10ms
= 10 ms
= 10ms
= 1600 A
= 6 V
= 6V
= 0,5 V
= 0,5 V
= 6 V, R
= 6 V, R
= 0,67 V
= 6 V
vj max
vj max
vj max
RRM
GM
DRM
DRM
= 1 A
A
GK>
DRM
= 5
= 10
V
V
V
I
I
I
I²t
(di
(dv
v
V
r
A= 0,93854
B= 3,384E-04
C=-5,551E-02
D= 2,001E-02
I
V
I
V
I
I
i
t
D
TRSMSM
TAVM
TSM
T
GT
GD
H
L
gd
T
DRM
DSM
RSM
T(TO)
GT
GD
, i
T
D
R
/dt)
/dt)
, V
cr
cr
RRM
Seite/page 1
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
1200
1600
1200
1600
1300
1700
N
1400
1800
1400
1800
1500
1900
8000
6900
1000
1200
320
1,92
800
508
238
120
200
300
0,8
0,6
0,2
10
50
2
5
4
V
V
V
V
V
V
A
A
A
A
A²s *10
A²s *10
A/µs
V/µs
V
V
m
mA
V
mA
mA
mV
mA
mA
mA
µs
1)
3
3

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