IKCS12F60AA Infineon Technologies, IKCS12F60AA Datasheet - Page 8

• Manufacturer Part Number: IKCS12F60AA
• Description: IGBT Modules CiPoS Single In-Line 600V 12A
• Manufacturer: Infineon Technologies

Specifications of IKCS12F60AA

• Collector-emitter Saturation Voltage: 2.1 V
• Power Dissipation: 35 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Package / Case: MSIP-20
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
(T
Module Section
IGBT and Diode Section
1
2
3
Preliminary Data Sheet
Storage temperature range
Operating temperature control PCB
Solder temperature
Insulation test voltage
Mounting torque
Mounting pressure on surface
Creepage distance
External bootstrap capacitor
Collector-Emitter breakdown voltage
DC output current
Repetitive peak collector current
Short circuit withstand time
Power dissipation per IGBT
Operating junction temperature
range
Monitored by pin 24
For static operation with biased High-Side VS is reduced by 50V.
Allowed number of short circuits: <1000; time between short circuits: >1s.
c
= 25°C, if not stated otherwise)
Description
Description
3
1
2
Wave soldering,
1.6mm (0.063in.)
from case for 10s
RMS, f=50Hz, t
=1min
M3 screw and washer M
Package flat on
mounting surface
single capacitor
charging, VDD = 20V
V
t
T
150°C
T
150°C
t
V
T
T
IGBT
Diode
p
p
c
c
j
c
GE
DD
< 250ns
limited by T
≤ 150°C
= 25°C,T
= 80°C,T
= 25°C
=0V, I
= 15V,V
Condition
Condition
8/17
C
= 0.25mA,
DC
vJ
vJ
<
<
vJmax
≤
400V,
T
T
T
V
N
d
C
V
I
I
t
P
T
T
Symbol
Symbol
u
u
sc
S
stg
PCB
sol
, I
, I
vjI
vjD
ISOL
(BR)CES
tot
MC
bs,ext
S
v
v
, I
, I
w
w
CIPOS™ IKCS12F60AA
2500
Min
min
600
-40
-12
-18
-40
-40
3.1
-6
-
-
-
-
-
-
Value
Value
Rev. 1.4, Dec. 2007
max
max
125
125
260
150
150
150
0.6
18
12
35
2
6
5
-
-
-
N/mm²
Unit
Unit
mm
Nm
°C
°C
°C
µF
°C
µs
W
V
V
A
A