FMM6G30US60 Fairchild Semiconductor, FMM6G30US60 Datasheet - Page 3

• Manufacturer Part Number: FMM6G30US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FMM6G30US60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 30 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Electrical Characteristics of DIODE
Electrical Characteristics of DIODE
Thermal Characteristics
NTC Thermistor Characteristics
V
t
I
Q
V
I
Inverter
Converter
Weight
Thermistor
rr
rr
RRM
Symbol
Symbol
FM
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Diode Forward Voltage
Repetitive Reverse Current
R
R
R
Symbol
θJC
θJC
θJC
R
R
B
Symbol
(25/100)
25
100
Parameter
Parameter
Weight of Module
Junction-to-Case (IGBT Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Rated Resistance @ Tc = 25°C
Rated Resistance @ Tc = 100 °C
B - Value
Parameter
Parameter
I
di / dt = 60 A/us
V
I
F
I
F
F
R
= 30A
= 30A
= 30A
= V
@ Inverter
@ Converter
RRM
Test Conditions
Test Conditions
T
C
T
T
T
T
T
T
T
T
T
T
T
T
T
= 25°C unless otherwise noted
C
C
C
C
C
C
C
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C unless otherwise noted
Typ.
210
+/- 5 %
+/- 5 %
+/- 3 %
--
--
--
Tol.
Min.
Min.
--
--
--
--
--
--
--
--
--
--
--
--
Max.
1.2
1.5
1.3
Typ.
Typ.
--
130
400
880
0.415
2.0
2.0
2.2
3.4
1.1
1.0
3692
90
Typ.
--
5
5.0
Max.
Max.
180
600
2.8
3.4
1.5
--
--
--
--
--
--
8
FMM6G30US60 Rev. A
Units
°C/W
°C/W
°C/W
Units
g
KΩ
KΩ
Units
Units
mA
nC
ns
V
A
V