FMM6G30US60 Fairchild Semiconductor, FMM6G30US60 Datasheet - Page 4

• Manufacturer Part Number: FMM6G30US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FMM6G30US60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 30 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
0.005
0.01
Fig 5. Transient Thermal Impedance
Fig 1. Typical Output Characteristics
Fig 3. Typical Saturation Voltage
0.1
5
1
10
Common Emitter
T
Common Emitter
V
T
T
-5
C
C
C
GE
= 125
= 25 ] øø
= 125 ] ------
= 15 V
Characteristics
10
o
C
-4
Rectangular Pulse Duration [sec]
20V
10
18V
-3
16V
15V
10
-2
10
-1
IGBT
DIODE :
14V
V
10
GE
:
0
12V
= 10V
10
1
Fig 2. Typical Saturation Voltage
Fig 4. Saturation Voltage vs. Case
Fig 6. Capacitance Characteristics
Common Emitter
T
Common Emitter
V
C
Characteristics
Temperature at Variant Current Level
GE
= 25
= 15 V
o
C
20V
18V
16V
15V
14V 12V
V
GE
= 10V
FMM6G30US60 Rev. A
15 A
30 A
60 A