IXGH10N300 IXYS, IXGH10N300 Datasheet

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IXGH10N300

Manufacturer Part Number
IXGH10N300
Description
IGBT Transistors Very High Voltage NPT IGBT; 3000V VCES
Manufacturer
IXYS
Datasheet

Specifications of IXGH10N300

Vces, (v)
3000
Ic25, Tc=25°c, Igbt, (a)
18
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (k/w)
1.25
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Voltage IGBT
For Capacitor Discharge
Applications
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C90
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Test Conditions
Test Conditions
I
I
V
V
I
I
C
C
C
C
J
J
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 90°C
= 25°C, 1ms
= 20V, T
= 25°C
= 250μA, V
= 250μA, V
= 0.8 • V
= 0V, V
= 10A, V
= 30A
VJ
GE
CES,
GE
= 125°C, R
= ±20V
GE
CE
= 15V
V
GE
= 0V
= V
= 0V
GE
GE
= 1MΩ
G
= 50Ω
Advance Technical Information
T
J
= 125°C
IXGH10N300
3000
Min.
Characteristic Values
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
@
I
1.13/10
CM
Typ.
1250
3000
3000
= 32
±20
±30
100
150
300
260
18
10
40
6
±100
Max.
500
3.5
5.2
Nm/lb.in.
5.0
25
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
V
V
V
V
g
V
I
V
TO-247 AD
G = Gate
E = Emitter
Features
Applications
Advantages
C90
High Peak Current Capability
Low Saturation Voltage
Low Gate Drive Requirement
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Capacitor Discharge
Pulser Circuits
High Power Density
Easy to Mount
CES
CE(sat)
G
C
E
= 3000V
= 10A
≤ ≤ ≤ ≤ ≤ 3.5V
C
TAB = Collector
= Collector
DS100151(05/09)
(TAB)

Related parts for IXGH10N300

IXGH10N300 Summary of contents

Page 1

... V = 0.8 • CES CE CES ±20V 0V, V GES 10A 15V CE(sat 30A C © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGH10N300 Maximum Ratings 3000 = 1MΩ 3000 GE ±20 ± 50Ω ≤ @ 1250 100 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 Characteristic Values Min ...

Page 2

... V 7.5 CE CES 12.0 72 227 154 530 0.21 > 1200V. CE 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH10N300 TO-247 (IXGH) Outline Max Terminals Gate Source ns Dim. Millimeter Min 4 2 2.2 1.25 °C/W ...

Page 3

... V = 25V GE 20V 1.8 15V 1.6 1.4 10V 1.2 1.0 0.8 0.6 5V 0.4 3.5 4.0 4.5 5.0 5.5 6 15V IXGH10N300 Fig. 2. Extended Output Characteristics @ 25º 25V GE 20V 15V 10V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 20A 10A -50 - Degrees Centigrade J Fig ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 40º 25ºC 12 125º 1,000 100 10 Fig. 11. Maximum Transient Thermal Impedance 1800 2200 2600 3000 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGH10N300 Fig. 8. Gate Charge V = 950V 10A 10mA NanoCoulombs G Fig. 10. Capacitance ...

Page 5

... R = 50Ω 15V 1250V CE 180 500 160 400 140 300 120 200 100 80 100 IXGH10N300 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current R = 50Ω 15V 1250V 125º 25º Amperes C Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature t ...

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