MGP15N35CL ON Semiconductor, MGP15N35CL Datasheet - Page 6

• Manufacturer Part Number: MGP15N35CL
• Description: IGBT Transistors 15A 350V Ignition
• Manufacturer: ON Semiconductor

Specifications of MGP15N35CL

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 380 V
• Collector-emitter Saturation Voltage: 10 V
• Maximum Gate Emitter Voltage: 22 V
• Gate-emitter Leakage Current: 150 W
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 15 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector Current (dc) (max): 15A
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 360V
• Power Dissipation Pd: 150W
• Collector Emitter Voltage V(br)ceo: 360V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
14
12
10
0.1
0.00001
10
8
6
4
2
0
250
1
Figure 13. Switching Speed vs. External Gate
Single Pulse
Duty Cycle = 0.5
0.05
0.01
0.02
0.2
0.1
R
G
, EXTERNAL GATE RESISTANCE (Ω)
0.0001
500
Resistance
t
d(off)
t
f
(Non−normalized Junction−to−Ambient mounted on
0.001
Figure 15. Transient Thermal Resistance
750
V
V
T
I
L = 300 μH
C
J
CC
GE
= 10 A
= 25°C
= 300 V
= 5.0 V
0.01
fixture in Figure 16)
http://onsemi.com
1000
P
t,TIME (S)
DUTY CYCLE, D = t
(pk)
6
0.1
14
12
10
8
6
4
2
0
250
t
1
t
2
Figure 14. Switching Speed vs. External Gate
V
V
T
I
L = 300 μH
C
CC
GE
J
= 10 A
= 150°C
= 300 V
= 5.0 V
R
1
G
1
/t
, EXTERNAL GATE RESISTANCE (Ω)
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T
T
R
500
J(pk)
θJC
≅ R(t) for t ≤ 0.2 s
Resistance
− T
10
A
t
d(off)
= P
t
f
(pk)
1
R
θJA
750
(t)
100
1000
1000