HDBS102G Taiwan Semiconductor, HDBS102G Datasheet - Page 2

• Manufacturer Part Number: HDBS102G
• Description: Rectifiers 1.0 Amp 100 Volt 50 Amp IFSM
• Manufacturer: Taiwan Semiconductor

Specifications of HDBS102G

• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Package / Case: DBS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RD

1.0
0.5
RATINGS AND CHARACTERISTIC CURVES (HDB(S)101G THRU HDB(S)107G)
0
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
0.1
20
1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.4- TYPICAL JUNCTION CAPACITANCE
60Hz RESISTIVE OR
INDUCTIVE LOAD
SURGE CURRENT
50
NONINDUCTIVE
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
CURVE
40
2
0.5
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1
AMBIENT TEMPERATURE. ( C)
NUMBER OF CYCLES AT 60Hz
60
2. Rise Time=10ns max. Sourse Impedance=
2
REVERSE VOLTAGE. (V)
5
NON
INDUCTIVE
1 megohm 22pf
50 ohms
DUT
10
NONINDUCTIVE
5
80
10
10
OSCILLOSCOPE
(NOTE 1)
20
100
8.3ms Single Half Sine Wave
JEDEC Method
20
o
50
Copper Pauls
.51" x .51"
(13mm x 13mm)
120
Tj=25 C
100 200
.06" (1.5mm)
PCB
0
PULSE
GENERATOR
(NOTE 2)
50
140 150
500
(-)
(+)
100
800
+0.5A
-0.25A
-1.0A
FIG.2- TYPICAL FORWARD CHARACTERISTICS
FIG.5- TYPICAL REVERSE CHARACTERISTICS
0.001
0.01
1000
100
0.1
0
0.1
10
10
1
1
0.2
0
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=25 C
0.4
20
trr
1cm
0
FORWARD VOLTAGE. (V)
Tj=125 C
0.6
40
SET TIME BASE FOR
5/ 10ns/ cm
0
0.8
60
1.0
80
1.2
Tj=25 C
100
Version: A06
0
1.4
120
1.6
140