CY7C1315KV18-250BZC Cypress Semiconductor Corp, CY7C1315KV18-250BZC Datasheet - Page 23

• Manufacturer Part Number: CY7C1315KV18-250BZC
• Description: CY7C1315KV18-250BZC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315KV18-250BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Note
Document Number: 001-58904 Rev. *C
I
26. The operation current is calculated with 50% read cycle and 50% write cycle.
DD
Parameter
[26]
V
DD
operating supply
Description
[22]
(continued)
V
f = f
DD
MAX
= Max, I
= 1/t
OUT
Test Conditions
CYC
= 0 mA,
333 MHz
300 MHz
250 MHz
200 MHz
167 MHz
CY7C1313KV18, CY7C1315KV18
CY7C1311KV18, CY7C1911KV18
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
(× 8)
(× 9)
(× 8)
(× 9)
(× 8)
(× 9)
(× 8)
(× 9)
(× 8)
(× 9)
Min
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
520
520
530
730
490
490
500
670
430
430
440
590
380
380
390
500
340
340
350
450
Page 23 of 33
Unit
mA
mA
mA
mA
mA
[+] Feedback