CY7C1470V25-200BZI Cypress Semiconductor Corp, CY7C1470V25-200BZI Datasheet - Page 10
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CY7C1470V25-200BZI
Manufacturer Part Number
CY7C1470V25-200BZI
Description
CY7C1470V25-200BZI
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1470V25-200BZXC.pdf
(31 pages)
Specifications of CY7C1470V25-200BZI
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
72M (2M x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.375 V ~ 2.625 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1470V25-200BZI
Manufacturer:
ALLEGRO
Quantity:
6 000
Company:
Part Number:
CY7C1470V25-200BZI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1470V25-200BZI
Manufacturer:
CYPRESS
Quantity:
20 000
Company:
Part Number:
CY7C1470V25-200BZIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Truth Table
Partial Write Cycle Description
Document Number: 38-05290 Rev. *L
Deselect cycle
Continue deselect cycle
Read cycle (begin burst)
Read cycle (continue burst)
NOP/dummy read (begin burst)
Dummy read (continue burst)
Write cycle (begin burst)
Write cycle (continue burst)
NOP/write abort (begin burst)
Write abort (continue burst)
Ignore clock edge (stall)
Sleep mode
Read
Write – no bytes written
Write byte a – (DQ
Write byte b – (DQ
Write bytes b, a
Write byte c – (DQ
Write bytes c, a
Write bytes c, b
Write bytes c, b, a
Write byte d – (DQ
Write bytes d, a
Write bytes d, b
Write bytes d, b, a
Write bytes d, c
Write bytes d, c, a
Write bytes d, c, b
Write all bytes
Notes
1. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for all chip enables active. BW
2. Write is defined by WE and BW
3. When a write cycle is detected, all I/Os are tri-stated, even during byte writes.
4. The DQ and DQP pins are controlled by the current cycle and the OE signal.
5. CEN = H inserts wait states.
6. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE.
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQ
8. Table only lists a partial listing of the byte write combinations. Any combination of BW
signifies that the desired byte write selects are asserted, see Write Cycle Description table for details.
is inactive or when the device is deselected, and DQ
Operation
Function (CY7C1470V25)
[1, 2, 3, 4, 5, 6, 7]
a
b
c
d
and DQP
and DQP
and DQP
and DQP
[a:d]
c
a
d
b
)
)
)
)
. See Write Cycle Description table for details.
Address
External
External
External
Current
Used
None
None
None
None
Next
Next
Next
Next
[1, 2, 3, 8]
s
= data when OE is active.
CE
H
X
X
X
X
X
X
X
L
L
L
L
ZZ
H
L
L
L
L
L
L
L
L
L
L
L
WE
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
ADV/LD WE BW
H
H
H
H
H
X
X
L
L
L
L
L
[a:d]
is valid. Appropriate write will be done based on which byte write is active.
BW
X
X
H
X
H
X
X
X
X
X
L
L
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
x
= L signifies at least one byte write select is active, BW
d
X
X
X
X
X
X
H
H
X
X
L
L
x
OE
X
H
H
X
X
X
X
X
X
L
L
X
BW
LL
H
H
H
H
H
H
H
H
X
L
L
L
L
L
L
L
c
CEN
H
X
L
L
L
L
L
L
L
L
L
L
s
CLK
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
and DQP
X
BW
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
b
CY7C1470V25
CY7C1472V25
CY7C1474V25
[a:d]
Data out (Q)
Data out (Q)
Data in (D)
Data in (D)
= tri-state when OE
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
DQ
–
Page 10 of 31
BW
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
x
= valid
a
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