BAS56,215 NXP Semiconductors, BAS56,215 Datasheet - Page 3
![DIODE SW 60V 200MA HS SOT143B](/photos/5/30/53004/568-sot-143b_sml.jpg)
BAS56,215
Manufacturer Part Number
BAS56,215
Description
DIODE SW 60V 200MA HS SOT143B
Manufacturer
NXP Semiconductors
Datasheet
1.BAS56215.pdf
(12 pages)
Specifications of BAS56,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Current - Reverse Leakage @ Vr
100nA @ 120V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
60V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
0.2 A
Max Surge Current
9 A
Configuration
Dual Parallel
Recovery Time
6 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1604-2
933742310215
BAS56 T/R
933742310215
BAS56 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS56,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BAS56
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
Table 6.
[1]
Symbol
V
V
I
I
I
P
T
T
Symbol
R
R
F
FRM
FSM
j
stg
RRM
R
tot
th(j-a)
th(j-t)
Series connection.
Device mounted on an FR4 PCB.
Single diode loaded.
Double diode loaded.
T
Device mounted on an FR4 PCB.
j
= 25 °C prior to surge.
Limiting values
Thermal characteristics
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 June 2010
Conditions
square wave
T
Conditions
in free air
amb
t
t
t
p
p
p
= 1 μs
= 100 μs
= 10 ms
= 25 °C
[2][3]
[2][4]
[1]
[1]
[3]
[4]
[5]
[2]
[1]
High-speed double diode
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
−65
Min
-
-
Typ
-
-
© NXP B.V. 2010. All rights reserved.
Max
60
120
60
120
200
150
600
430
9
3
1.7
250
150
+150
BAS56
Max
500
360
Unit
V
V
V
V
mA
mA
mA
mA
A
A
A
mW
°C
°C
Unit
K/W
K/W
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