BAS56,215 NXP Semiconductors, BAS56,215 Datasheet - Page 4

• Manufacturer Part Number: BAS56,215
• Description: DIODE SW 60V 200MA HS SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BAS56,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Voltage - Forward (vf) (max) @ If: 1V @ 200mA
• Current - Reverse Leakage @ Vr: 100nA @ 120V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 60V
• Reverse Recovery Time (trr): 6ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 9 A
• Configuration: Dual Parallel
• Recovery Time: 6 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1604-2; 933742310215; BAS56 T/R

NXP Semiconductors
7. Characteristics
BAS56
Product data sheet
Table 7.
T
[1]
[2]
[3]
[4]
[5]
Symbol
V
I
C
t
V
R
rr
j
F
FR
d
= 25
T
Series connection.
When switched from I
When switched from I
When switched from I
amb
°
C unless otherwise specified.
= 25 °C; device has reached the thermal equilibrium when mounted on an FR4 PCB.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Characteristics
All information provided in this document is subject to legal disclaimers.
F
F
F
= 400 mA to I
= 400 mA; t
= 400 mA; t
Rev. 3 — 29 June 2010
r
r
= 30 ns.
= 100 ns.
R
I
f = 1 MHz; V
Conditions
V
V
V
V
F
= 400 mA; R
R
R
R
R
= 200 mA
= 60 V
= 60 V; T
= 120 V
= 120 V; T
L
j
R
= 100 Ω; measured at I
= 150 °C
j
= 0 V
= 150 °C
[1]
[2]
[2]
[3]
[4]
[5]
High-speed double diode
Min
-
-
-
-
-
-
-
-
-
R
= 40 mA.
Typ
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
BAS56
Max
1
100
100
100
100
2.5
6
2
1.5
Unit
V
nA
μA
nA
μA
pF
ns
V
V
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