BAS56,215 NXP Semiconductors, BAS56,215 Datasheet - Page 6
![DIODE SW 60V 200MA HS SOT143B](/photos/5/30/53004/568-sot-143b_sml.jpg)
BAS56,215
Manufacturer Part Number
BAS56,215
Description
DIODE SW 60V 200MA HS SOT143B
Manufacturer
NXP Semiconductors
Datasheet
1.BAS56215.pdf
(12 pages)
Specifications of BAS56,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Current - Reverse Leakage @ Vr
100nA @ 120V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
60V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
0.2 A
Max Surge Current
9 A
Configuration
Dual Parallel
Recovery Time
6 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1604-2
933742310215
BAS56 T/R
933742310215
BAS56 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS56,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
8. Test information
BAS56
Product data sheet
Fig 6.
Fig 7.
R
V = V
(1) I
S
R
S
= 50 Ω
Input signal: pulse duration t
Reverse recovery time test circuit and waveforms
Forward recovery voltage test circuit and waveforms
R
R
= 50
I
+ I
= 40 mA
F
Ω
×
R
S
1 kΩ
D.U.T.
Fig 5.
450 Ω
I
F
(1) Single diode loaded
(2) Double diode loaded
D.U.T.
OSCILLOSCOPE
Forward current as a function of ambient temperature; derating curves
p
= 300 ns; duty cycle δ = 0.01.
R
i
= 50 Ω
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
mga881
SAMPLING
R
i
= 50
(mA)
I
300
200
100
F
Rev. 3 — 29 June 2010
Ω
0
0
I
V
R
10 %
t
r
t
10 %
r
(1)
(2)
90 %
input signal
90 %
input signal
t
p
100
t
p
T
amb
(°C)
t
mbg439
t
200
V
High-speed double diode
+ I
F
V FR
output signal
output signal
© NXP B.V. 2010. All rights reserved.
BAS56
t rr
mga882
(1)
t
6 of 12
t