BAS56,235 NXP Semiconductors, BAS56,235 Datasheet - Page 7
![DIODE DUAL SW 120V 200MA SOT143](/photos/5/30/53004/568-sot-143b_sml.jpg)
BAS56,235
Manufacturer Part Number
BAS56,235
Description
DIODE DUAL SW 120V 200MA SOT143
Manufacturer
NXP Semiconductors
Datasheet
1.BAS56215.pdf
(12 pages)
Specifications of BAS56,235
Package / Case
SOT-143, SOT-143B, TO-253AA
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Current - Reverse Leakage @ Vr
100nA @ 120V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
60V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
0.2 A
Max Surge Current
9 A
Configuration
Dual Parallel
Recovery Time
6 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933742310235
BAS56 /T3
BAS56 /T3
BAS56 /T3
BAS56 /T3
NXP Semiconductors
9. Package outline
10. Packing information
BAS56
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
BAS56
Fig 8.
For further information and the availability of packing methods, see
Package outline BAS56 (SOT143B)
Packing methods
All information provided in this document is subject to legal disclaimers.
Package
SOT143B
2.5
2.1
Dimensions in mm
Rev. 3 — 29 June 2010
1.4
1.2
Description
4 mm pitch, 8 mm tape and reel
1
4
0.88
0.78
3.0
2.8
1.9
1.7
3
2
0.48
0.38
0.45
0.15
Section
High-speed double diode
1.1
0.9
[1]
0.15
0.09
04-11-16
14.
© NXP B.V. 2010. All rights reserved.
Packing quantity
3000
-215
BAS56
10000
-235
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