TIC226N-S Bourns Inc., TIC226N-S Datasheet

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TIC226N-S

Manufacturer Part Number
TIC226N-S
Description
Triacs 800V 8A TRIAC
Manufacturer
Bourns Inc.
Datasheet

Specifications of TIC226N-S

Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
70 A
Off-state Leakage Current @ Vdrm Idrm
2 mA
Gate Trigger Voltage (vgt)
2 V
Gate Trigger Current (igt)
50 mA
Holding Current (ih Max)
30 mA
Forward Voltage Drop
2.1 V @ 12 A
Mounting Style
Through Hole
Package / Case
TO-220
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
electrical characteristics at 25°C case temperature (unless otherwise noted )
† All voltages are with respect to Main Terminal 1.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs)
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
I
V
V
DRM
GT
GT
T
R O D U C T
8 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
4. This value applies for a maximum averaging time of 20 ms.
PARAMETER
Repetitive peak
off-state current
Gate trigger
current
Gate trigger
voltage
On-state voltage
the rate of 320 mA/°C.
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
GT
of 50 mA (Quadrants 1 - 3)
I N F O R M A T I O N
V
V
V
V
V
V
V
V
V
I
T
D
supply
supply
supply
supply
supply
supply
supply
supply
= ±12 A
= rated V
= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†
RATING
DRM
I
R
R
R
R
R
R
R
R
I
TEST CONDITIONS
G
G
L
L
L
L
L
L
L
L
= 0
= 50 mA
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
MT2
MT1
G
Pin 2 is in electrical contact with the mounting base.
T
t
t
t
t
t
t
t
t
(see Note 5)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
TIC226M
TIC226D
TIC226S
TIC226N
C
= 110°C
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
I
P
T(RMS)
V
I
P
T
I
G(AV)
TSM
T
DRM
GM
T
GM
stg
C
L
MIN
1
2
3
SILICON TRIACS
TYP
±1.5
-0.8
-0.8
-40 to +110
-40 to +125
-12
-10
0.7
0.9
25
TIC226 SERIES
6
VALUE
400
600
700
800
230
2.2
0.9
±1
70
8
MAX
±2.1
-50
-50
±2
50
-2
-2
2
2
MDC2ACA
UNIT
UNIT
mA
mA
°C
°C
°C
W
W
V
A
A
A
V
V
1

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TIC226N-S Summary of contents

Page 1

... T T † All voltages are with respect to Main Terminal APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MT1 MT2 G Pin electrical contact with the mounting base. RATING TIC226D TIC226M TIC226S TIC226N TEST CONDITIONS DRM Ω = +12 V† p( Ω ...

Page 2

... All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: = 100 Ω µ ≤ ...

Page 3

... THERMAL INFORMATION MAX AVERAGE POWER DISSIPATED TI01AB 110 ° Conduction Angle = 360 ° Above 8 A rms 24 See 100 125 0 2 TIC226 SERIES SILICON TRIACS LATCHING CURRENT vs CASE TEMPERATURE TC01AE ± supply GTM - 100 120 T - Case Temperature - °C C Figure 4 ...

Page 4

... TIC226 SERIES SILICON TRIACS PARAMETER MEASUREMENT INFORMATION L1 I MT2 DUT R1 NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 µ MT2 V MT2 R G See V Note A MT2 ...

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