16TTS12PBF Vishay, 16TTS12PBF Datasheet - Page 2

• Manufacturer Part Number: 16TTS12PBF
• Description: SCRs 1200 Volt 16 Amp
• Manufacturer: Vishay

Specifications of 16TTS12PBF

• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: Through Hole
• Package / Case: TO-220AC
• Peak Repetitive Off-state Voltage, Vdrm: 1.2kV
• Gate Trigger Current Max, Igt: 90mA
• Current It Av: 10A
• On State Rms Current It(rms): 16A
• Peak Non Rep Surge Current Itsm 50hz: 200A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

16TTS..PbF High Voltage Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
2
2
t for fusing
√t for fusing
For technical questions, contact: [e-mail]
SYMBOL
SYMBOL
SYMBOL
I
P
V
RM
- V
dV/dt
+ I
I
I
dI/dt
P
I
V
V
V
Phase Control SCR, 10 A
T(AV)
I
G(AV)
I
RMS
TSM
T(TO)
I
I
2
GT
GD
t
I
I
t
GM
t
2
TM
r
GT
GD
/I
H
gt
√t
L
GM
rr
q
GM
t
t
DM
T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
10 A, T
T
T
T
Anode supply = 6 V, resistive load, initial I
16TTS08PbF, 16TTS12PbF
Anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
T
T
T
C
J
J
J
J
J
J
= 125 °C
= 25 °C
= 125 °C
= 125 °C, V
= 25 °C
= 125 °C
= 98 °C, 180° conduction, half sine wave
J
= 25 °C
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
DRM
V
R
= Rated V
= Rated value
RRM
RRM
RRM
applied
applied
/V
DRM
J
J
J
J
J
J
= - 65 °C
= 25 °C
= 125 °C
= - 65 °C
= 25 °C
= 125 °C
T
= 1 A
Document Number: 94603
TYP.
VALUES
VALUES
-
VALUES
110
8.0
2.0
1.5
3.0
2.0
1.0
0.2
2.0
0.9
10
90
60
35
4
2000
24.0
170
200
144
200
200
500
150
Revision: 15-Sep-08
1.4
1.1
0.5
10
16
10
MAX.
100
UNITS
UNITS
mA
mA
µs
UNITS
W
A
V
V
A
V/µs
A/µs
A
mΩ
mA
2
A
V
V
2
√s
s