STTH2002CT STMicroelectronics, STTH2002CT Datasheet - Page 4
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STTH2002CT
Manufacturer Part Number
STTH2002CT
Description
DIODE FAST 200V 2X10A TO-220AB
Manufacturer
STMicroelectronics
Datasheet
1.STTH2002CT.pdf
(11 pages)
Specifications of STTH2002CT
Voltage - Forward (vf) (max) @ If
1.1V @ 10A
Current - Reverse Leakage @ Vr
10µA @ 200V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
27ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.25 V at 20 A
Recovery Time
27 ns
Forward Continuous Current
30 A
Max Surge Current
90 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3547-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STTH2002CT
Manufacturer:
ST
Quantity:
10 000
Company:
Part Number:
STTH2002CT
Manufacturer:
STMicroelectronics
Quantity:
1 759
Part Number:
STTH2002CT
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STTH2002CT,STTH2003CT,STTH1602CT,STTH1002CT,
Manufacturer:
ST
0
Characteristics
4/11
Figure 1.
Figure 3.
Figure 5.
100
1.0
0.1
0.0
90
80
70
60
50
40
30
20
10
1.E-03
0
80
70
60
50
40
30
20
10
0.0
0
Z
I
0.0
FM
th(j-c)
I (A)
Single pulse
M
(A)
0.2
P = 5W
0.1
/R
th(j-c)
0.4
Peak current versus duty cycle
(per diode)
Forward voltage drop versus
forward current
(maximum values, per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
0.2
1.E-02
0.6
P = 10W
0.3
0.8
P = 20W
0.4
1.0
t (s)
1.E-01
p
T =150°C
0.5
j
1.2
δ
V
FM
(V)
1.4
0.6
1.6
0.7
1.E+00
T =25°C
1.8
I
δ
M
j
=tp/T
0.8
2.0
T
0.9
Doc ID 10176 Rev 2
tp
2.2
1.E+01
1.0
2.4
Figure 2.
Figure 4.
Figure 6.
100
100
1.0
0.1
90
80
70
60
50
40
30
20
10
10
1.E-03
0
0.0
0
Z
I
C(pF)
FM
th(j-c)
Single pulse
(A)
0.2
/R
th(j-c)
0.4
Forward voltage drop versus
forward current
(typical values, per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
0.6
50
1.E-02
0.8
1.0
T =150°C
V
t (s)
j
p
V (V)
FM
100
1.2
R
(V)
1.4
TO-220AB, D PAK, I PAK
1.E-01
1.6
T =25°C
j
150
1.8
STTH2002C
V
2
OSC
F=1MHz
2.0
T =25°C
=30mV
j
2
RMS
2.2
1.E+00
200
2.4