STPS20S100CFP STMicroelectronics, STPS20S100CFP Datasheet - Page 3

• Manufacturer Part Number: STPS20S100CFP
• Description: DIODE SCHTKY 100V 10A TO-220FPAB
• Manufacturer: STMicroelectronics

Specifications of STPS20S100CFP

• Voltage - Forward (vf) (max) @ If: 850mV @ 10A
• Current - Reverse Leakage @ Vr: 3.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-7554-5; STPS20S100CFP

STPS20S100C
Figure 1.
Figure 3.
Figure 5.
0.001
10
180
160
140
120
100
0.01
9
8
7
6
5
4
3
2
1
0
80
60
40
20
0.1
1.E-03
0
0
0.01
P
1
I (A)
F(AV)
M
P
P
I
ARM
M
1
ARM p
(W)
(1µs)
(t )
δ
2
=0.5
t
Average forward power dissipation
versus average forward current
(per diode)
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
0.1
Normalized avalanche power
3
δ = 0.05
1.E-02
4
5
1
δ = 0.1
I
t (µs)
F(AV)
6
p
t(s)
(A)
7
δ = 0.2
10
8
1.E-01
9
δ = 0.5
10
100
δ
=tp/T
δ = 1
11
T =125°C
T =25°C
T =75°C
a
Doc ID 11281 Rev 2
T
a
a
12
1.E+00
tp
1000
13
Figure 2.
Figure 4.
Figure 6.
11
10
1.2
0.8
0.6
0.4
0.2
120
110
100
9
8
7
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
1
0
1.E-03
0
25
0
I
F(AV)
P ARM (25°C)
I (A)
M
P ARM (T j )
I
M
δ
=tp/T
(A)
25
δ
=0.5
t
T
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
50
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
tp
50
1.E-02
75
R
th(j-a)
75
T
=15°C/W
amb
T (°C)
t(s)
j
R
(°C)
th(j-a)
100
=R
100
th(j-c)
1.E-01
TO-220FPAB
125
Characteristics
125
TO-220FPAB
I²PAK/TO-220AB
150
T =125°C
T =25°C
T =75°C
a
a
a
1.E+00
150
175
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