STPS20S100CFP STMicroelectronics, STPS20S100CFP Datasheet - Page 4

• Manufacturer Part Number: STPS20S100CFP
• Description: DIODE SCHTKY 100V 10A TO-220FPAB
• Manufacturer: STMicroelectronics

Specifications of STPS20S100CFP

• Voltage - Forward (vf) (max) @ If: 850mV @ 10A
• Current - Reverse Leakage @ Vr: 3.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-7554-5; STPS20S100CFP

Characteristics
Figure 11. Forward voltage drop versus forward current (per diode)
4/9
Figure 7.
Figure 9.
1.E+01
1.E+00
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-01
1.E-02
1.E-03
1.E-04
1.E-03
Z
th(j-c)
δ = 0.5
δ = 0.2
Single pulse
δ = 0.1
10
I (mA)
R
/R
20
th(j-c)
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
30
1.E-02
40
t (s)
50
p
100
60
10
1
0.0
1.E-01
I
V (V)
FM
R
70
(A)
0.2
δ
=tp/T
80
T
Doc ID 11281 Rev 2
90
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
0.4
(typical values)
j
j
j
j
j
j
T =125°C
tp
j
1.E+00
100
(maximum values)
0.6
T =125°C
j
V
Figure 8.
Figure 10. Junction capacitance versus
FM
(V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1000
0.8
100
1.E-03
10
Z
1
Single pulse
C(pF)
th(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
(maximum values)
1.0
T =25°C
j
/R
th(j-c)
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
(TO-220FPAB)
reverse voltage applied (typical
values, per diode)
1.E-02
1.2
1.4
TO-220FPAB
t (s)
1.E-01
V (V)
p
R
10
1.E+00
STPS20S100C
δ
=tp/T
V
OSC
T
F=1MHz
T =25°C
=30mV
j
tp
1.E+01
RMS
100