STPS20L25CT STMicroelectronics, STPS20L25CT Datasheet

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STPS20L25CT

Manufacturer Part Number
STPS20L25CT
Description
DIODE SCHOTTKY 25V 10A TO-220AB
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS20L25CT

Voltage - Forward (vf) (max) @ If
460mV @ 10A
Current - Reverse Leakage @ Vr
800µA @ 25V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
25V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
497-7552-5
STPS20L25CT
FEATURES AND BENEFITS
n
n
n
DESCRIPTION
Dual center tap Schottky rectifier suited to
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB and D
especially intended for use as a rectifier at the
secondary of 3.3V SMPS units.
ABSOLUTE RATINGS (limiting values, per diode)
* :
MAIN PRODUCT CHARACTERISTICS
July 2003 - Ed : 4A
Symbol
I
VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
I
F(AV)
T
dPtot
RRM
RSM
FSM
RRM
ARM
Tj
dTj
stg
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Rth j
(
1
a
)
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
2
PAK, this device is
2 x 10 A
150 °C
0.35 V
25 V
Parameter
Tc = 145°C
tp = 10 ms Sinusoidal
tp=2 µs square F=1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
= 0.5
STPS20L25CT
TO-220AB
Per diode
Per device
STPS20L25CT/CG
A1
A2
A1
K
A2
- 65 to + 150
10000
STPS20L25CG
Value
5300
K
220
150
25
30
10
20
1
3
D
K
2
PAK
A1
A2
V/µs
Unit
°C
W
V
A
A
A
A
A
C
1/5

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STPS20L25CT Summary of contents

Page 1

... Rth July 2003 - 150 °C 0.35 V STPS20L25CT 2 PAK, this device is Parameter Tc = 145° Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square tp = 1µ 25°C STPS20L25CT/ TO-220AB D PAK STPS20L25CG Value 25 30 Per diode 10 Per device 20 ...

Page 2

... STPS20L25CT/CG THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Tests conditions I * Reverse leakage current Forward voltage drop F Pulse test 380 µs, < evaluate the maximum conduction losses use the following equation : ...

Page 3

... C(nF) 5.0 1.0 VR(V) 0 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness : 35 µm). (STPS20L25G only) Rth(j-a) (°C/ STPS20L25CT/CG = 0.5 = 0.2 = 0.1 tp(s) Single pulse 1.0E-3 1.0E-2 1.0E-1 VR( S(Cu) (cm² =tp/T tp 1.0E+0 F=1MHz Tj=25° ...

Page 4

... STPS20L25CT/CG PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 8.90 4/5 REF COOLING n (METHOD C) 5.08 1.30 3.70 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 ...

Page 5

... Diam. Package TO-220AB 2 D PAK 2 D PAK STMicroelectronics GROUP OF COMPANIES http://www.st.com STPS20L25CT/CG DIMENSIONS Millimeters Inches Min. Max. Min. 4.40 4.60 0.173 1.23 1.32 0.048 2.40 2.72 0.094 0.49 0.70 0.019 0.61 0.88 0.024 1.14 1.70 0.044 1.14 1.70 0.044 4.95 5 ...

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